Datasheet 2N3019, 2N3020 (Comset Semiconductors) - 3
| Hersteller | Comset Semiconductors |
| Beschreibung | Silicon Planar Epitaxial Transistors |
| Seiten / Seite | 4 / 3 — NPN 2N3019 – 2N3020. ELECTRICAL CHARACTERISTICS |
| Dateiformat / Größe | PDF / 89 Kb |
| Dokumentensprache | Englisch |
NPN 2N3019 – 2N3020. ELECTRICAL CHARACTERISTICS
Modelllinie für dieses Datenblatt
Textversion des Dokuments
NPN 2N3019 – 2N3020
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) fT Transition frequency hfe Small Signal Current Gain NF Noise Figure CCBO Collector-Base capacitance CEBO Emitter-Base capacitance rbb’Cb’c Feedback Time Constant IC =50 mA
VCE =10 V
f = 20 MHz
IC =1 mA
VCE =5 V
f = 1 kHz
IC=-100 µA
VCE =10 V
f = 1 kHz
Rg = 1kΩ
IE = 0
VCB=10 V
f = 1 MHz
IC = 0
VEB=0.5 V
f = 1 MHz
IC =10 mA
VCE =10 V
f = 4 MHz Min Typ Max Unit 2N3019 100 -2N3020 80 -2N3019 80 -400 2N3020 30 -200 2N3019 -4 dB -12 pF -60 pF -400 ps MHz -2N3019
2N3020
2N3019
2N3020
2N3019
2N3020 (*) Pulse conditions : tp < 300 µs, δ =2% 16/10/2012 COMSET SEMICONDUCTORS 3/4
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) fT Transition frequency hfe Small Signal Current Gain NF Noise Figure CCBO Collector-Base capacitance CEBO Emitter-Base capacitance rbb’Cb’c Feedback Time Constant IC =50 mA
VCE =10 V
f = 20 MHz
IC =1 mA
VCE =5 V
f = 1 kHz
IC=-100 µA
VCE =10 V
f = 1 kHz
Rg = 1kΩ
IE = 0
VCB=10 V
f = 1 MHz
IC = 0
VEB=0.5 V
f = 1 MHz
IC =10 mA
VCE =10 V
f = 4 MHz Min Typ Max Unit 2N3019 100 -2N3020 80 -2N3019 80 -400 2N3020 30 -200 2N3019 -4 dB -12 pF -60 pF -400 ps MHz -2N3019
2N3020
2N3019
2N3020
2N3019
2N3020 (*) Pulse conditions : tp < 300 µs, δ =2% 16/10/2012 COMSET SEMICONDUCTORS 3/4