Datasheet NTE326 (NTE Electronics)

NTE326 Silicon P−Channel JFET Transistor General Purpose AF Amplifier TO92 Type Package Absolute Maximum Ratings:
(TA = +25C unless otherwise specified) Drain−Gate Voltage, VDG . 40V Reverse Gate−Source Voltage, VGSR . 40V Forward Gate Current, IG(f) . 10mA Total Device Dissipation (TA = +25C), PD . 310mW Derate Above 25C . 2.82mW/C Operating Junction Temperature Range, TJ . −65 to +135C Storage Temperature Range, Tstg . −55 to +150C
Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Gate−Source Breakdown Voltage V(BR)GSS IG = 10A, VDS = 0 40 − − V Gate Reverse Current IGSS VGS = 20V, VDS = 0 − − 5 nA VGS = 20V, VDS = 0, TA = +100C − − 1 A Gate−Source Cutoff Voltage VGS(off) ID = 1A, VDS = 15V 1.0 − 7.5 V Gate−Source Voltage VGS ID = 0.2mA, VDS = 15V 0.8 − 4.5 V
ON Characteristics
Zero−Gate−Voltage Drain Current IDSS VDS = 15V, VGS = 0, f = 1kHz 2 − 9 mA
Small−Signal Characteristics
Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 1kHz 1500 − 5000 mho Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz − − 75 mho Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1MHz − 5 7 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1MHz − 1 2 pF
Functional Characteristics
Noise Figure NF VDS = 15V, VGS = 0, RG = 1M, − 1.0 2.5 dB f = 100Hz, BW = 1Hz Equivalent Short−Circuit Input Noise en VDS = 15V, VGS = 0, f = 100Hz, − 60 115 nV/pHz Voltage BW = 1Hz Rev. 2−16