Datasheet NTE102 (PNP), NTE103 (NPN) (NTE Electronics)

NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver TO−5 / TO−39 Type Package Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me- dium−speed saturated switching applications.
Features:
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter−Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20A
Absolute Maximum Ratings:
Collector−Base Voltage, VCBO . 25V Collector−Emitter Voltage, VCES . 24V Emitter−Base Voltage, VEBO . 12V Continuous Collector Current, IC . 150mA Emitter Current, IE . 100mA Total Device Dissipation (TA = +25C), PD . 150mW Derate Above +25 . 2mW/C Total Device Dissipation (TC = +25C), PD . 300mW Derate Above +25 . 4mW/C Operating Junction Temperature Range, TJ . −65 to +100C Storage Junction Temperature Range, Tstg . −65 to +100C
Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Collector−Base Breakdown Voltage V(BR)CBO IC = 20A, IE = 0 25 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 20A, IC = 0 12 − − V Punch−Through Voltage VPT VEBfl = 1V, Note 1 24 − − V Collector Cutoff Current ICBO VCB = 12V, IE = 0 − 0.8 5.0 A VCB = 12V, IE = 0, TA = +80C − 20 90 A Emitter Cutoff Current IEBO VEB = 2.5V, IC = 0 − 0.5 2.5 A Note 1. VPT is determined by measuring the Emitter−Base floating potential VEBfl, using a voltmeter with 11M minimum input impedance. The Collector−Base Voltage, VCB, is increased until VEBfl = 1V; this value of VCB = (VPT + 1). Rev. 3−21