Datasheet CBR1F-D020S (Central Semiconductor)
| Hersteller | Central Semiconductor |
| Beschreibung | SURFACE MOUNT 1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER |
| Seiten / Seite | 5 / 1 — CBR1F-D020S SERIES. SURFACE MOUNT. www.centra lsemi.com. 1 AMP FAST … |
| Dateiformat / Größe | PDF / 564 Kb |
| Dokumentensprache | Englisch |
CBR1F-D020S SERIES. SURFACE MOUNT. www.centra lsemi.com. 1 AMP FAST RECOVERY. DESCRIPTION:. SILICON BRIDGE RECTIFIER
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CBR1F-D020S SERIES SURFACE MOUNT www.centra lsemi.com 1 AMP FAST RECOVERY DESCRIPTION: SILICON BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBR1F-D020S Series types are fast recovery, full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER SMDIP CASE MAXIMUM RATINGS: CBR1F- CBR1F- CBR1F- CBR1F- CBR1F-
(TA=25°C unless otherwise specified)
SYMBOL D020S D040S D060S D080S D100S UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V DC Blocking Voltage VR 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V Average Forward Current (TA=40°C) IO 1.0 A Peak Forward Surge Current IFSM 50 A Rating for Fusing (t<8.35ms) I2t 3.74 A2s Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE
: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=Rated VRRM 5.0 µA IR VR=Rated VRRM, TA=125°C 0.5 mA VF IF=1.0A 1.3 V trr IF=0.5A, IR=1.0A, Rec. to 0.25A (200V, 300V, 400V) 200 ns trr IF=0.5A, IR=1.0A, Rec. to 0.25A (600V) 300 ns trr IF=0.5A, IR=1.0A, Rec. to 0.25A (800V, 1000V) 500 ns CJ VR=4.0V, f=1.0MHz 25 pF R1 (4-January 2010)
The CENTRAL SEMICONDUCTOR CBR1F-D020S Series types are fast recovery, full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER SMDIP CASE MAXIMUM RATINGS: CBR1F- CBR1F- CBR1F- CBR1F- CBR1F-
(TA=25°C unless otherwise specified)
SYMBOL D020S D040S D060S D080S D100S UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V DC Blocking Voltage VR 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V Average Forward Current (TA=40°C) IO 1.0 A Peak Forward Surge Current IFSM 50 A Rating for Fusing (t<8.35ms) I2t 3.74 A2s Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE
: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=Rated VRRM 5.0 µA IR VR=Rated VRRM, TA=125°C 0.5 mA VF IF=1.0A 1.3 V trr IF=0.5A, IR=1.0A, Rec. to 0.25A (200V, 300V, 400V) 200 ns trr IF=0.5A, IR=1.0A, Rec. to 0.25A (600V) 300 ns trr IF=0.5A, IR=1.0A, Rec. to 0.25A (800V, 1000V) 500 ns CJ VR=4.0V, f=1.0MHz 25 pF R1 (4-January 2010)