Datasheet CBRHDSH2-40 (Central Semiconductor)

HerstellerCentral Semiconductor
BeschreibungSURFACE MOUNT HIGH DENSITY 2 AMP SILICON SCHOTTKY BRIDGE RECTIFIER
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DokumentenspracheEnglisch

CBRHDSH2-40. SURFACE MOUNT. www.centra lsemi.com. HIGH DENSITY. 2 AMP SILICON. DESCRIPTION:. SCHOTTKY BRIDGE RECTIFIER

Datasheet CBRHDSH2-40 Central Semiconductor

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CBRHDSH2-40 SURFACE MOUNT www.centra lsemi.com HIGH DENSITY 2 AMP SILICON DESCRIPTION: SCHOTTKY BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRHDSH2-40 is a full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CSH2 FEATURES:
Low Leakage Current (20µA TYP @ VRRM)

High 2.0A Current Rating
HD DIP CASE
Low VF Schottky Diodes (500mV MAX @IF=2.0A)
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V DC Blocking Voltage VR 40 V RMS Reverse Voltage VR(RMS) 28 V Average Forward Current IO 2.0 A Peak Forward Surge Current IFSM 30 A Power Dissipation PD 2.0 W Operating Junction Temperature TJ -50 to +125 °C Storage Temperature Tstg -50 to +150 °C Thermal Resistance ΘJA 50 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=40V 20 50 µA IR VR=40V, TA=100°C 5.0 20 mA VF IF=2.0A 450 500 mV CJ VR=4.0V, f=1.0MHz 250 pF R5 (19-August 2020)