Datasheet SI2308DS (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | N-Channel 60-V (D-S) MOSFET |
| Seiten / Seite | 5 / 3 — Si2308DS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Dateiformat / Größe | PDF / 84 Kb |
| Dokumentensprache | Englisch |
Si2308DS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics. On-Resistance vs. Drain Current. Capacitance
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Si2308DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 12 12 VGS = 10 thru 5 V 9 9 4 V 6 6 ain Current (A) ain Current (A) - Dr - Dr I D I D 3 3 3 V TC = 125 °C 25 °C - 55 °C 1 V, 2 V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
1.0 400 ) 0.8 Ω 300 Ciss 0.6 200 - On-Resistance ( 0.4 - Capacitance (pF) DS(on) C C R VGS = 4.5 V 100 oss 0.2 Crss VGS = 10 V 0.0 0 0 3 6 9 12 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
10 2.0 VDS = 30 V ID = 2.0 A 1.8 VGS = 10 V I 8 D = 2.0 A 1.6 oltage (V) V 6 ed) 1.4 maliz On-Resistance 1.2 4 - (Nor (on) - Gate-to-Source DS 1.0 R GS 2 V 0.8 0 0.6 0 1 2 3 4 5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 70797 www.vishay.com S09-0133-Rev. D, 02-Feb-09 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 12 12 VGS = 10 thru 5 V 9 9 4 V 6 6 ain Current (A) ain Current (A) - Dr - Dr I D I D 3 3 3 V TC = 125 °C 25 °C - 55 °C 1 V, 2 V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
1.0 400 ) 0.8 Ω 300 Ciss 0.6 200 - On-Resistance ( 0.4 - Capacitance (pF) DS(on) C C R VGS = 4.5 V 100 oss 0.2 Crss VGS = 10 V 0.0 0 0 3 6 9 12 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
10 2.0 VDS = 30 V ID = 2.0 A 1.8 VGS = 10 V I 8 D = 2.0 A 1.6 oltage (V) V 6 ed) 1.4 maliz On-Resistance 1.2 4 - (Nor (on) - Gate-to-Source DS 1.0 R GS 2 V 0.8 0 0.6 0 1 2 3 4 5 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 70797 www.vishay.com S09-0133-Rev. D, 02-Feb-09 3