Datasheet BF909, BF909R (NXP) - 9

NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R
Table 1
Scattering parameters: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA
s11 s21 s12 s22 f (MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg)
50 0.985 −6.4 4.064 172.3 0.001 86.9 0.985 −3.2 100 0.978 −12.6 3.997 164.9 0.002 82.7 0.982 −6.4 200 0.957 −25.0 3.886 150.8 0.005 74.3 0.973 −12.6 300 0.931 −36.5 3.682 137.3 0.006 68.9 0.960 −18.6 400 0.899 −47.6 3.484 123.8 0.007 59.6 0.947 −24.2 500 0.868 −57.4 3.260 111.7 0.007 57.9 0.936 −29.6 600 0.848 −66.6 3.053 101.0 0.006 58.5 0.927 −34.8 700 0.816 −74.6 2.829 90.3 0.005 65.5 0.919 −39.8 800 0.792 −82.2 2.652 79.9 0.005 83.3 0.913 −44.6 900 0.772 −89.3 2.470 69.5 0.005 114.9 0.910 −49.5 1000 0.754 −95.6 2.328 59.5 0.006 138.7 0.909 −54.6
Table 2
Noise data: Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 15 mA
f F
Γ
min opt r (MHz) (dB) n (ratio) (deg)
800 2.00 0.603 67.71 0.581 Rev. 02 - 19 November 2007 9 of 12 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINES Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history