Datasheet MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G (ON Semiconductor) - 3

MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G TYPICAL ELECTRICAL CHARACTERISTICS
2.8 500 f = 1.0 MHz 2.4 (pF) 400 2.0 KRAKAUER METHOD ANCE 300 1.6 ACIT CAP 1.2 AL 200 0.8 , TOT TC 100 0.4 , MINORITY CARRIER LIFETIME (ps) t 0 0 0 3.0 6.0 9.0 12 15 18 21 24 27 30 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) IF, FORWARD CURRENT (mA)
Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime
10 100 T A) A = 100°C m 1.0 10 T T A = 85°C A = -40°C 75°C 0.1 ARD CURRENT (mA) 1.0 25°C , REVERSE LEAKAGE ( 0.01 , FORW TA = 25°C I R I F 0.001 0.1 0 6.0 12 18 24 30 0.2 0.4 0.6 0.8 1.0 1.2 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Reverse Leakage Figure 4. Forward Voltage
IF(PEAK) CAPACITIVE CONDUCTION IR(PEAK) FORWARD STORAGE CONDUCTION CONDUCTION BALLAST SAMPLING SINUSOIDAL NETWORK PADS OSCILLOSCOPE GENERATOR (PADS) (50 W INPUT) DUT
Figure 5. Krakauer Method of Measuring Lifetime www.onsemi.com 3