Datasheet IRF540 (Vishay) - 4

IRF540
www.vishay.com Vishay Siliconix RD VDS 150 °C VGS D.U.T. R 101 25 °C G + - VDD ain Current (A) 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 100 erse Dr v
Fig. 10a - Switching Time Test Circuit
, Re I SD V = 0 V GS 10-1 V 0.4 0.8 1.2 1.6 DS 90 % 91021_07 VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10 % VGS 103 t t t t Operation in this area limited d(on) r d(off) f 5 by RDS(on)
Fig. 10b - Switching Time Waveforms
2 10 µs 102 5 100 µs 2 ain Current (A) 1 ms 10 , Dr I D 5 10 ms T = 25
°
C C 2 T = 175
°
C J Single Pulse 1 2 5 2 5 2 5 2 5 0.1 1 10 102 103 2 5 104 91021_08 VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
30 25 20 15 ain Current (A) 10 , Dr I D 5 0 25 50 75 100 125 150 175 91021_09 TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
S21-0819-Rev. C, 02-Aug-2021
4
Document Number: 91021 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000