Datasheet Si3430DV (Vishay) - 8
| Hersteller | Vishay |
| Beschreibung | N-Channel 100 V (D-S) MOSFET |
| Seiten / Seite | 10 / 8 — AN823. Vishay Siliconix. FIGURE 3. On-Resistance vs. Junction … |
| Dateiformat / Größe | PDF / 239 Kb |
| Dokumentensprache | Englisch |
AN823. Vishay Siliconix. FIGURE 3. On-Resistance vs. Junction Temperature. Equivalent Steady State Performance—TSOP-6. FIGURE 4
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AN823 Vishay Siliconix
10 s (max) 255 − 260_C 1X4_C/s (max) 3-6_C/s (max) 217_C 140 − 170_C 60 s (max) 3_C/s (max) 60-120 s (min) Reflow Zone Pre-Heating Zone Maximum peak temperature at 240_C is allowed.
FIGURE 3.
Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE A basic measure of a device’s thermal performance is the
On-Resistance vs. Junction Temperature
junction-to-case thermal resistance, Rqjc, or the 1.6 junction-to-foot thermal resistance, Rqjf. This parameter is VGS = 4.5 V measured for the device mounted to an infinite heat sink and ID = 6.1 A is therefore a characterization of the device only, in other 1.4 words, independent of the properties of the object to which the device is mounted. Table 1 shows the thermal performance of the TSOP-6. 1.2 − On-Resiistance (Normalized) 1.0 TABLE 1. (on) r DS
Equivalent Steady State Performance—TSOP-6
0.8 Thermal Resistance Rqjf 30_C/W 0.6 −50 −25 0 25 50 75 100 125 150 SYSTEM AND ELECTRICAL IMPACT OF TJ − Junction Temperature (_C) TSOP-6
FIGURE 4.
Si3434DV In any design, one must take into account the change in MOSFET rDS(on) with temperature (Figure 4). www.vishay.com Document Number: 71743
2
27-Feb-04
10 s (max) 255 − 260_C 1X4_C/s (max) 3-6_C/s (max) 217_C 140 − 170_C 60 s (max) 3_C/s (max) 60-120 s (min) Reflow Zone Pre-Heating Zone Maximum peak temperature at 240_C is allowed.
FIGURE 3.
Solder Reflow Temperature and Time Durations THERMAL PERFORMANCE A basic measure of a device’s thermal performance is the
On-Resistance vs. Junction Temperature
junction-to-case thermal resistance, Rqjc, or the 1.6 junction-to-foot thermal resistance, Rqjf. This parameter is VGS = 4.5 V measured for the device mounted to an infinite heat sink and ID = 6.1 A is therefore a characterization of the device only, in other 1.4 words, independent of the properties of the object to which the device is mounted. Table 1 shows the thermal performance of the TSOP-6. 1.2 − On-Resiistance (Normalized) 1.0 TABLE 1. (on) r DS
Equivalent Steady State Performance—TSOP-6
0.8 Thermal Resistance Rqjf 30_C/W 0.6 −50 −25 0 25 50 75 100 125 150 SYSTEM AND ELECTRICAL IMPACT OF TJ − Junction Temperature (_C) TSOP-6
FIGURE 4.
Si3434DV In any design, one must take into account the change in MOSFET rDS(on) with temperature (Figure 4). www.vishay.com Document Number: 71743
2
27-Feb-04