Datasheet Si3430DV (Vishay) - 5
| Hersteller | Vishay |
| Beschreibung | N-Channel 100 V (D-S) MOSFET |
| Seiten / Seite | 10 / 5 — Si3430DV. TYPICAL CHARACTERISTICS. Normalized Thermal Transient … |
| Dateiformat / Größe | PDF / 239 Kb |
| Dokumentensprache | Englisch |
Si3430DV. TYPICAL CHARACTERISTICS. Normalized Thermal Transient Impedance, Junction-to-Ambient
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Si3430DV
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 ransient 0.2 e T v Notes: fecti 0.1 mal Impedance 0.1 P ed Ef DM Ther 0.05 maliz t1 t2 Nor t1 0.02 1. Duty Cycle, D = t2 2. Per Unit Base = R thJA = 90 °C/W 3. T (t) Single Pulse JM - TA = PDMZthJA 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 ransient 0.2 e T v fecti 0.1 mal Impedance 0.1 ed Ef 0.05 Ther maliz 0.02 Nor Single Pulse 0.01 10-3 10-2 10-1 10-4 1 0 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71235. S19-0836-Rev. E, 30-Sep-2019
5
Document Number: 71235 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 ransient 0.2 e T v Notes: fecti 0.1 mal Impedance 0.1 P ed Ef DM Ther 0.05 maliz t1 t2 Nor t1 0.02 1. Duty Cycle, D = t2 2. Per Unit Base = R thJA = 90 °C/W 3. T (t) Single Pulse JM - TA = PDMZthJA 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 ransient 0.2 e T v fecti 0.1 mal Impedance 0.1 ed Ef 0.05 Ther maliz 0.02 Nor Single Pulse 0.01 10-3 10-2 10-1 10-4 1 0 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71235. S19-0836-Rev. E, 30-Sep-2019
5
Document Number: 71235 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000