Datasheet MJ14001, MJ14002, MJ14003 (ON Semiconductor) - 5
| Hersteller | ON Semiconductor |
| Beschreibung | High−Current Complementary Silicon Power Transistors |
| Seiten / Seite | 7 / 5 — PACKAGE DIMENSIONS. TO−204 (TO−3). CASE 197A−05. ISSUE K. DATE 21 FEB … |
| Revision | 6 |
| Dateiformat / Größe | PDF / 172 Kb |
| Dokumentensprache | Englisch |
PACKAGE DIMENSIONS. TO−204 (TO−3). CASE 197A−05. ISSUE K. DATE 21 FEB 2000. SCALE 1:1. C −T− SEATING. INCHES. MILLIMETERS. PLANE. DIM MIN
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS TO−204 (TO−3) CASE 197A−05 ISSUE K DATE 21 FEB 2000 SCALE 1:1 A
NOTES: 1. DIMENSIONING AND TOLERANCING PER
N
ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
C −T− SEATING INCHES MILLIMETERS E PLANE DIM MIN MAX MIN MAX A
1.530 REF 38.86 REF
K D 2 PL B
0.990 1.050 25.15 26.67 0.30 (0.012) M T Q M Y M
C
0.250 0.335 6.35 8.51
D
0.057 0.063 1.45 1.60
E
0.060 0.070 1.53 1.77
G
0.430 BSC 10.92 BSC
H
0.215 BSC 5.46 BSC
K
0.440 0.480 11.18 12.19
U −Y− L
0.665 BSC 16.89 BSC
V L N
0.760 0.830 19.31 21.08
Q
0.151 0.165 3.84 4.19
2 U
1.187 BSC 30.15 BSC
G B V
0.131 0.188 3.33 4.77
H 1 −Q− GENERIC MARKING DIAGRAM*
0.25 (0.010) M T Y M STYLE 1: STYLE 2: STYLE 3: STYLE 4: XXXXXX PIN 1. BASE PIN 1. EMITTER PIN 1. GATE PIN 1. ANODE = 1 2. EMITTER 2. BASE 2. SOURCE 2. ANODE = 2 A CASE: COLLECTOR CASE: COLLECTOR CASE: DRAIN CASE: CATHODES YYWW XXXXX = Specific Device Code A = Assembly Locationa YY = Year WW = Work Week *This information is generic. Please refer to device data sheet for actual part marking.
DOCUMENT NUMBER: 98ASB42128B
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD
versions are uncontrolled except when stamped
NEW STANDARD:
“CONTROLLED COPY” in red. © Semiconductor Components Industries, LLC, 2002
http://onsemi.com
Case Outline Number:
October, 2002 − Rev. 0 DESCRIPTION: TO−204 (TO−3) 1 PAGE XXX 1 OF 2
PACKAGE DIMENSIONS TO−204 (TO−3) CASE 197A−05 ISSUE K DATE 21 FEB 2000 SCALE 1:1 A
NOTES: 1. DIMENSIONING AND TOLERANCING PER
N
ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
C −T− SEATING INCHES MILLIMETERS E PLANE DIM MIN MAX MIN MAX A
1.530 REF 38.86 REF
K D 2 PL B
0.990 1.050 25.15 26.67 0.30 (0.012) M T Q M Y M
C
0.250 0.335 6.35 8.51
D
0.057 0.063 1.45 1.60
E
0.060 0.070 1.53 1.77
G
0.430 BSC 10.92 BSC
H
0.215 BSC 5.46 BSC
K
0.440 0.480 11.18 12.19
U −Y− L
0.665 BSC 16.89 BSC
V L N
0.760 0.830 19.31 21.08
Q
0.151 0.165 3.84 4.19
2 U
1.187 BSC 30.15 BSC
G B V
0.131 0.188 3.33 4.77
H 1 −Q− GENERIC MARKING DIAGRAM*
0.25 (0.010) M T Y M STYLE 1: STYLE 2: STYLE 3: STYLE 4: XXXXXX PIN 1. BASE PIN 1. EMITTER PIN 1. GATE PIN 1. ANODE = 1 2. EMITTER 2. BASE 2. SOURCE 2. ANODE = 2 A CASE: COLLECTOR CASE: COLLECTOR CASE: DRAIN CASE: CATHODES YYWW XXXXX = Specific Device Code A = Assembly Locationa YY = Year WW = Work Week *This information is generic. Please refer to device data sheet for actual part marking.
DOCUMENT NUMBER: 98ASB42128B
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed
STATUS: ON SEMICONDUCTOR STANDARD
versions are uncontrolled except when stamped
NEW STANDARD:
“CONTROLLED COPY” in red. © Semiconductor Components Industries, LLC, 2002
http://onsemi.com
Case Outline Number:
October, 2002 − Rev. 0 DESCRIPTION: TO−204 (TO−3) 1 PAGE XXX 1 OF 2