Datasheet MJ14001, MJ14002, MJ14003 (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | High−Current Complementary Silicon Power Transistors |
| Seiten / Seite | 7 / 3 — MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP). TYPICAL ELECTRICAL … |
| Revision | 6 |
| Dateiformat / Größe | PDF / 172 Kb |
| Dokumentensprache | Englisch |
MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP). TYPICAL ELECTRICAL CHARACTERISTICS. MJ14002 (NPN). MJ14001, MJ14003 (PNP)
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MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) TYPICAL ELECTRICAL CHARACTERISTICS MJ14002 (NPN) MJ14001, MJ14003 (PNP)
300 300 200 200 100 100 GAIN 70 GAIN 70 50 50 VCE = 3.0 V VCE = 3.0 V 30 30 TJ = −55°C TJ = −55°C 20 20 TJ = 25°C TJ = 25°C , DC CURRENT TJ = 150°C , DC CURRENT TJ = 150°C h FE 10 h FE 10 7.0 7.0 5.0 5.0 3.0 3.0 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain Figure 4. DC Current Gain
TS) 2.8 TS) 2.8 (VOL (VOL 2.4 TJ = 25°C 2.4 TJ = 25°C IC = 60 A IC = 60 A TAGE TAGE 2.0 2.0 VOL VOL 1.6 1.6 IC = 25 A IC = 25 A 1.2 1.2 OR−EMITTER OR−EMITTER 0.8 I 0.8 C = 10 A IC = 10 A 0.4 0.4 , COLLECT , COLLECT V CE 0 V CE 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (AMPS) IB, BASE CURRENT (AMPS)
Figure 5. Collector Saturation Region Figure 6. Collector Saturation Region
2.8 2.8 TJ = 25°C TJ = 25°C 2.4 2.4 2.0 2.0 TS) TS) (VOL 1.6 (VOL 1.6 TAGE 1.2 TAGE 1.2 V VBE(sat) @ IC/IB = 10 V, VOL BE(sat) @ IC/IB = 10 0.8 V, VOL 0.8 VBE(on) @ VCE = 3.0 V VBE(on) @ VCE = 3.0 V 0.4 0.4 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0 0 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 7. “On” Voltages Figure 8. “On” Voltages http://onsemi.com 3
300 300 200 200 100 100 GAIN 70 GAIN 70 50 50 VCE = 3.0 V VCE = 3.0 V 30 30 TJ = −55°C TJ = −55°C 20 20 TJ = 25°C TJ = 25°C , DC CURRENT TJ = 150°C , DC CURRENT TJ = 150°C h FE 10 h FE 10 7.0 7.0 5.0 5.0 3.0 3.0 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain Figure 4. DC Current Gain
TS) 2.8 TS) 2.8 (VOL (VOL 2.4 TJ = 25°C 2.4 TJ = 25°C IC = 60 A IC = 60 A TAGE TAGE 2.0 2.0 VOL VOL 1.6 1.6 IC = 25 A IC = 25 A 1.2 1.2 OR−EMITTER OR−EMITTER 0.8 I 0.8 C = 10 A IC = 10 A 0.4 0.4 , COLLECT , COLLECT V CE 0 V CE 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (AMPS) IB, BASE CURRENT (AMPS)
Figure 5. Collector Saturation Region Figure 6. Collector Saturation Region
2.8 2.8 TJ = 25°C TJ = 25°C 2.4 2.4 2.0 2.0 TS) TS) (VOL 1.6 (VOL 1.6 TAGE 1.2 TAGE 1.2 V VBE(sat) @ IC/IB = 10 V, VOL BE(sat) @ IC/IB = 10 0.8 V, VOL 0.8 VBE(on) @ VCE = 3.0 V VBE(on) @ VCE = 3.0 V 0.4 0.4 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 0 0 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 7. “On” Voltages Figure 8. “On” Voltages http://onsemi.com 3