Datasheet NTD4815NH (ON Semiconductor) - 3

NTD4815NH THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit
Junction- to- Case (Drain) RθJC 4.6 °C/W Junction- to- TAB (Drain) RθJC- TAB 3.5 Junction- to- Ambient – Steady State (Note 1) RθJA 78 Junction- to- Ambient – Steady State (Note 2) RθJA 119 1. Surface- mounted on FR4 board using 1 sq- in pad, 1 oz Cu. 2. Surface- mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS
Drain- to- Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain- to- Source Breakdown Voltage V(BR)DSS/ 25 Temperature Coefficient T mV/°C J Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25 °C 1 VDS = 24 V mA TJ = 125°C 10 Gate- to- Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS
(Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 2.5 V Negative Threshold Temperature VGS(TH)/TJ 5.6 Coefficient mV/°C Drain- to- Source On Resistance RDS(on) VGS = 10 V to ID = 30 A 12 15 11.5 V ID = 15 A 11.5 mΩ VGS = 4.5 V ID = 20 A 21.5 27.7 ID = 15 A 20.1 Forward Transconductance gFS VDS = 15 V, ID = 10 A 6.0 S
CHARGES AND CAPACITANCES
Input Capacitance CISS 845 Output Capacitance COSS VGS = 0 V, f = 1.0 MHz, VDS = 12 V 183 pF Reverse Transfer Capacitance CRSS 103 Total Gate Charge QG(TOT) 6.4 6.8 Threshold Gate Charge QG(TH) 1.5 VGS = 4.5 V, VDS = 15 V; ID = 30 A nC Gate- to- Source Charge QGS 2.9 Gate- to- Drain Charge QGD 2.7 Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V; 15.2 nC ID = 30 A
SWITCHING CHARACTERISTICS
(Note 4) Turn- On Delay Time td(ON) 11.3 Rise Time tr V 17.6 GS = 4.5 V, VDS = 15 V, I ns Turn- Off Delay Time t D = 15 A, RG = 3.0 Ω d(OFF) 11 Fall Time tf 2.8 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com 2