AO3400A30V N-Channel MOSFETGeneral DescriptionProduct Summary The AO3400A combines advanced trench MOSFET VDS 30V technology with a low resistance package to provide ID (at VGS=10V) 5.7A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) < 26.5mΩ load switch or in PWM applications. RDS(ON) (at VGS = 4.5V) < 32mΩ RDS(ON) (at VGS = 2.5V) < 48mΩ SOS TO 2T 32 D ToT pop ViV eweBoB to tomom ViV ewe D D G G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted ParameterSymbolMaximumUnits Dr D a r i a n- n S - ou o r u c r e e Vol o tag a e g VDS 30 3 V DS Gate-Source Voltage VGS ±12 V TA=25°C 5.7 Continuous Drain ID Current TA=70°C 4.7 A Pulsed Drain Current C IDM 30 TA=25°C 1.4 PD W Power Dissipation B TA=70°C 0.9 Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Thermal CharacteristicsParameterSymbolTypMaxUnits Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W Rθ Maximum Junction-to-Ambient A D JA Steady-State 100 125 °C/W Maximum Junction-to-Lead Steady-State RθJL 63 80 °C/W Rev 3: Dec 2011 www.aosmd.com Page 1 of 5