Datasheet TIP125, TIP126,TIP127 (ON Semiconductor) - 4

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10k hFE, DC CURRENT GAIN VCE = -4V 1k 100
-0.1 -1 -3.5 IC = 250IB -3.0 -2.5 -2.0 VBE(sat) -1.5 -1.0 VCE(sat) -0.5
-0.1 -10 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage 1000 -10 s
0μ
10 IC[A], COLLECTOR CURRENT s
5m Cob Cib s
0μ
50 ms
1 100 DC Cob[pF] Cib[pF], CAPACITANCE f = 0.1MHz -1 -0.1 TIP125
TIP126
TIP127 10
-0.1 -1 -10 -0.01 -100 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE
VEB[V], EMITTER-BASE VOLTAGE Figure 3. Output and Input Capacitance
vs. Reverse Voltage Figure 4. Safe Operating Area 90 PC[W], POWER DISSIPATION 75 60 45 30 15 0
0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating © 2001 Fairchild Semiconductor Corporation
TIP125 / TIP126 / TIP127 Rev. 1.1.0 www.fairchildsemi.com
3 TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor Typical Performance Characteristics