Datasheet TIP120, TIP121, TIP122 (ON Semiconductor) - 2

TIP120 / TIP121 / TIP122 — NPN Epi Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol Parameter Value Unit
Collector Dissipation (TA = 25°C) 2 PC W Collector Dissipation (TC = 25°C) 65
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit
TIP120 60 Collector-Emitter Sustaining VCEO(sus) TIP121 I 80 V Voltage C = 100 mA, IB = 0
taxial Darlington T
TIP122 100 TIP120 VCE = 30 V, IB = 0 0.5 ICEO Collector Cut-Off Current TIP121 V mA CE = 40 V, IB = 0 0.5 TIP122 VCE = 50 V, IB = 0 0.5 TIP120 VCB = 60 V, IE = 0 0.2 ICBO Collector Cut-Off Current TIP121 V mA CB = 80 V, IE = 0 0.2 TIP122 VCB = 100 V, IE = 0 0.2
r
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 2 mA
ansistor
VCE = 3 V, IC = 0.5 A 1000 hFE DC Current Gain(1) VCE = 3 V, IC = 3 A 1000 IC = 3 A, IB = 12 mA 2.0 VCE(sat) Collector-Emitter Saturation Voltage(1) V IC = 5 A, IB = 20 mA 4.0 VBE(on) Base-Emitter On Voltage(1) VCE = 3 V, IC = 3 A 2.5 V V C CB = 10 V, IE = 0, ob Output Capacitance 200 pF f = 0.1 MHz
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. www.onsemi.com 2