Datasheet ZVP3306A (Diodes) - 3
| Hersteller | Diodes |
| Beschreibung | P-Channel Enhancement Mode Vertical Dmos Fet |
| Seiten / Seite | 3 / 3 — TYPICAL CHARACTERISTICS. Transconductance v drain current. … |
| Dateiformat / Größe | PDF / 89 Kb |
| Dokumentensprache | Englisch |
TYPICAL CHARACTERISTICS. Transconductance v drain current. Transconductance v gate-source voltage
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ZVP3306A
TYPICAL CHARACTERISTICS
120 120 100 100 S) m ( e 80 80 c n Note:VDS=-10V Note:VDS=-10V 60 60 ducta n o 40 40 sc anr 20 ransconductance (mS) 20 -T -T fs s g f g 0 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
60 2 olts) 1 50 Note:VGS=0V Note:I ) (V D=- 0.2A F 0 p f=1MHz ( 40 aget -2 e c l n o -4 VDS= C ita 30 iss -20V -40V -60V c ce V -6 ur -8 20 C So oss -10 C-Capa te 10 -12 Ga Crss - -14 GS 0 V -16 0 -10 -20 -30 -40 -50 -60 -70 0 0.5 1.0 1.5 VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
3-431
TYPICAL CHARACTERISTICS
120 120 100 100 S) m ( e 80 80 c n Note:VDS=-10V Note:VDS=-10V 60 60 ducta n o 40 40 sc anr 20 ransconductance (mS) 20 -T -T fs s g f g 0 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)
Transconductance v drain current Transconductance v gate-source voltage
60 2 olts) 1 50 Note:VGS=0V Note:I ) (V D=- 0.2A F 0 p f=1MHz ( 40 aget -2 e c l n o -4 VDS= C ita 30 iss -20V -40V -60V c ce V -6 ur -8 20 C So oss -10 C-Capa te 10 -12 Ga Crss - -14 GS 0 V -16 0 -10 -20 -30 -40 -50 -60 -70 0 0.5 1.0 1.5 VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC)
Capacitance v drain-source voltage Gate charge v gate-source voltage
3-431