Datasheet NXH010P120MNF1PTNG, NXH010P120MNF1PNG (ON Semiconductor) - 7
| Hersteller | ON Semiconductor |
| Beschreibung | F1-2PACK SiC MOSFET Module |
| Seiten / Seite | 12 / 7 — NXH010P120MNF1PTNG, NXH010P120MNF1PNG. TYPICAL CHARACTERISTICS. ANCE … |
| Revision | P2 |
| Dateiformat / Größe | PDF / 2.2 Mb |
| Dokumentensprache | Englisch |
NXH010P120MNF1PTNG, NXH010P120MNF1PNG. TYPICAL CHARACTERISTICS. ANCE (pF). ACIT. CAP. VDS, DRAIN TO SOURCE VOLTAGE (V)
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NXH010P120MNF1PTNG, NXH010P120MNF1PNG TYPICAL CHARACTERISTICS
SiC MOSFET (M1, M2)
ANCE (pF) ACIT CAP VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance vs. Drain−to−Source Voltage
5
C/W] DUTY CYCLE PEAK RESPONSE [ PULSE ON TIME [s] Figure 10. SiC Mosfet Junction− to−Case Transient Thermal Impedance Element # M1 M2 Rth (K/W) Cth (Ws/K) Rth (K/W) Cth (Ws/K)
1 0.00569 0.00195 0.01290 0.00461 2 0.01079 0.00951 0.02387 0.02538 3 0.03005 0.01813 0.04253 0.02953 4 0.08398 0.08121 0.07199 0.08994 5 0.09325 0.11117 0.07823 0.06854
Figure 11. Table of Cauer Networks−M1, M2 www.onsemi.com 7
SiC MOSFET (M1, M2)
ANCE (pF) ACIT CAP VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance vs. Drain−to−Source Voltage
5
C/W] DUTY CYCLE PEAK RESPONSE [ PULSE ON TIME [s] Figure 10. SiC Mosfet Junction− to−Case Transient Thermal Impedance Element # M1 M2 Rth (K/W) Cth (Ws/K) Rth (K/W) Cth (Ws/K)
1 0.00569 0.00195 0.01290 0.00461 2 0.01079 0.00951 0.02387 0.02538 3 0.03005 0.01813 0.04253 0.02953 4 0.08398 0.08121 0.07199 0.08994 5 0.09325 0.11117 0.07823 0.06854
Figure 11. Table of Cauer Networks−M1, M2 www.onsemi.com 7