Datasheet FDS7788 (Fairchild)

FDS
February 2005
7788 FDS7788 30V N-Channel PowerTrench MOSFET General Description Features
This N-Channel MOSFET has been designed • 18 A, 30 V. RDS(ON) = 4.0 mΩ @ VGS = 10 V specifically to improve the overall efficiency of DC/DC R converters using either synchronous or conventional DS(ON) = 5.0 mΩ @ VGS = 4.5 V switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an • Low gate charge extremely low RDS(ON) in a small package. • Fast switching speed
Applications
• High power and current handling capability • DC/DC converter • Load switch • High performance trench technology for extremely • low R Motor drives DS(ON)
D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 18 A – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 D W (Note 1b) 1.2 (Note 1c) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity
FDS7788 FDS7788 13’’ 12mm 2500 units 2005 Fairchild Semiconductor Corporation FDS7788 Rev F (W)