Datasheet BC640-016G (ON Semiconductor)

link to page 2 BC640-016G High Current Transistors
PNP Silicon Features
• This is a Pb−Free Device
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COLLECTOR 2
MAXIMUM RATINGS Rating Symbol Value Unit
3 BASE Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage VCBO −80 Vdc 1 Emitter-Base Voltage VEBO −5.0 Vdc EMITTER Collector Current − Continuous IC −0.5 Adc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg −55 to +150 °C
TO−92
Temperature Range
CASE 29 THERMAL CHARACTERISTICS
1
STYLE 14
2 3
Characteristic Symbol Max Unit
STRAIGHT LEAD Thermal Resistance, Junction−to−Ambient R BULK PACK qJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
MARKING DIAGRAMS
Recommended Operating Conditions may affect device reliability. BC64 0−16 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
June, 2011 − Rev. 1 BC640/D