Datasheet UF3SC120040B7S (UnitedSiC) - 3

Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Value Parameter Symbol Test Conditions Units Min Typ Max Drain-source breakdown voltage BVDS VGS=0V, ID=1mA 1200 V VDS=1200V, 8 150 VGS=0V, TJ=25°C Total drain leakage current IDSS mA VDS=1200V, 35 VGS=0V, TJ=175°C V Total gate leakage current I DS=0V, TJ=25°C, GSS 6 20 mA VGS=-20V / +20V VGS=12V, ID=35A, 35 45 TJ=25°C Drain-source on-resistance RDS(on) mW VGS=12V, ID=35A, 73 TJ=175°C Gate threshold voltage VG(th) VDS=5V, ID=10mA 4 5 6 V Gate resistance RG f=1MHz, open drain 4.5 W Typical Performance - Reverse Diode Value Parameter Symbol Test Conditions Units Min Typ Max Diode continuous forward current 1 IS TC=25°C 47 A Diode pulse current 2 IS,pulse TC=25°C 175 A VGS=0V, IF=20A, 1.5 2 T Forward voltage V J=25°C FSD V VGS=0V, IF=20A, 1.95 TJ=175°C V Reverse recovery charge Q R=800V, IF=40A, rr 358 nC VGS=-5V, RG_EXT=10W di/dt=2400A/ms, Reverse recovery time trr T 25 ns J=25°C V Reverse recovery charge Q R=800V, IF=40A, rr 259 nC VGS=-5V, RG_EXT=10W di/dt=2400A/ms, Reverse recovery time trr T 22 ns J=150°C Datasheet: UF3SC120040B7S Rev. A, December 2020 3