Datasheet UF3SC065030B7S (UnitedSiC) - 8

HerstellerUnitedSiC
Beschreibung650V-27mW SiC FET
Seiten / Seite10 / 8 — 10,000. 70. C. 60. iss. ). A. 1,000. (. pF. I. D. 50. (. t,. C. n. ,. C. …
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DokumentenspracheEnglisch

10,000. 70. C. 60. iss. ). A. 1,000. (. pF. I. D. 50. (. t,. C. n. ,. C. e. e. oss. rr. 40. nc. 100. Cu. ita. n. 30. ac. ai. p. r. D. Ca. C. 20. 10. D. C. 10. rss. 1. 0. 0. 100. 200. 300. 400. 500. 600. -75. -50. -25. 0. 25. 50. 75. 100

10,000 70 C 60 iss ) A 1,000 ( pF I D 50 ( t, C n , C e e oss rr 40 nc 100 Cu ita n 30 ac ai p r D Ca C 20 10 D C 10 rss 1 0 0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100

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10,000 70 C 60 iss ) A 1,000 ( pF I D 50 ( t, C n , C e e oss rr 40 nc 100 Cu ita n 30 ac ai p r D Ca C 20 10 D C 10 rss 1 0 0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100 125 150 175 Drain-Source Voltage, VDS (V) Case Temperature, TC (°C) Figure 13. Typical capacitances at f = 100kHz and VGS Figure 14. DC drain current derating = 0V 250 1 ) W( 200 /W C ot °( P t ,n JC 0.1 io 150 Z q , D = 0.5 at e ip nc D = 0.3 ss a i 100 d D = 0.1 D r D = 0.05 e mpe 0.01 I w l o a D = 0.02 P 50 mre D = 0.01 Th Single Pulse 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 175 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Case Temperature, TC (°C) Pulse Time, tp (s) Figure 15. Total power dissipation Figure 16. Maximum transient thermal impedance Datasheet: UF3SC065030B7S Rev. A, December 2020 8