Datasheet UF3SC065030B7S (UnitedSiC) - 3

Electrical Characteristics (TJ = +25°C unless otherwise specified) Typical Performance - Static Value Parameter Symbol Test Conditions Units Min Typ Max Drain-source breakdown voltage BVDS VGS=0V, ID=1mA 650 V VDS=650V, 6 150 VGS=0V, TJ=25°C Total drain leakage current IDSS mA VDS=650V, 30 VGS=0V, TJ=175°C V Total gate leakage current I DS=0V, TJ=25°C, GSS 6 20 mA VGS=-20V / +20V VGS=12V, ID=40A, 27 35 TJ=25°C Drain-source on-resistance R VGS=12V, ID=40A, DS(on) 36 mW TJ=125°C VGS=12V, ID=40A, 43 TJ=175°C Gate threshold voltage VG(th) VDS=5V, ID=10mA 4 5 6 V Gate resistance RG f=1MHz, open drain 4.5 W Typical Performance - Reverse Diode Value Parameter Symbol Test Conditions Units Min Typ Max Diode continuous forward current 1 IS TC=25°C 62 A Diode pulse current 2 IS,pulse TC=25°C 230 A VGS=0V, IF=20A, 1.3 1.4 T Forward voltage V J=25°C FSD V VGS=0V, IF=20A, 1.35 TJ=175°C V Reverse recovery charge Q R=400V, IF=50A, rr 425 nC VGS=-5V, RG_EXT=10W di/dt=2650A/ms, Reverse recovery time trr 25 ns TJ=25°C V Reverse recovery charge Q R=400V, IF=50A, rr 280 nC VGS=-5V, RG_EXT=10W di/dt=2650A/ms, Reverse recovery time trr T 20 ns J=150°C Datasheet: UF3SC065030B7S Rev. A, December 2020 3