Datasheet UF3C120150B7S (UnitedSiC) - 6

HerstellerUnitedSiC
Beschreibung1200V-150mW SiC Cascode
Seiten / Seite10 / 6 — 700. 30. Tj. =. 175°C. Tj. =. -55°C. 600. ). 25. W. Tj. =. 25°C. Tj. =. …
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DokumentenspracheEnglisch

700. 30. Tj. =. 175°C. Tj. =. -55°C. 600. ). 25. W. Tj. =. 25°C. Tj. =. 25°C. (m. 500. Tj. =. -. 55°C. ). Tj. =. 175°C. n). A(. o. 20. (S. I. D. 400. ,. R. D. ,. nt. ec. er. 15. 300. r. ant. Cu. is. s. n. 10. e. 200. ai. R. r. -. D. On

700 30 Tj = 175°C Tj = -55°C 600 ) 25 W Tj = 25°C Tj = 25°C (m 500 Tj = - 55°C ) Tj = 175°C n) A( o 20 (S I D 400 , R D , nt ec er 15 300 r ant Cu is s n 10 e 200 ai R r - D On

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700 30 Tj = 175°C Tj = -55°C 600 ) 25 W Tj = 25°C Tj = 25°C (m 500 Tj = - 55°C ) Tj = 175°C n) A( o 20 (S I D 400 , R D , nt ec er 15 300 r ant Cu is s n 10 e 200 ai R r - D On 100 5 0 0 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 8 9 10 Drain Current, ID (A) Gate-Source Voltage, VGS (V) Figure 5. Typical drain-source on-resistances at VGS = Figure 6. Typical transfer characteristics at VDS = 5V 12V 6 20 ) 5 V V ( 15 V th V GS , 4 , e e g g 10 lta lta o 3 o V V d ec ol r 5 h 2 s ou e S r - Th te 0 1 Ga 0 -5 -100 -50 0 50 100 150 200 0 10 20 30 40 Junction Temperature, TJ (°C) Gate Charge, QG (nC) Figure 7. Threshold voltage vs. junction temperature Figure 8. Typical gate charge at VDS = 800V and ID = at VDS = 5V and ID = 10mA 13A Datasheet: UF3C120150B7S Rev. A, January 2021 6