Datasheet UF3C065080B7S (UnitedSiC) - 7

HerstellerUnitedSiC
Beschreibung650V-85mW SiC FET
Seiten / Seite10 / 7 — 0. 0. Vgs. =. -5V. Vgs. =. -. 5V. -5. -5. Vgs. =. 0V. Vgs. =. 0V. ). A(. …
Dateiformat / GrößePDF / 441 Kb
DokumentenspracheEnglisch

0. 0. Vgs. =. -5V. Vgs. =. -. 5V. -5. -5. Vgs. =. 0V. Vgs. =. 0V. ). A(. A. Vgs. =. 5V. -10. Vgs. =. 5V. (. -10. I. ,. D. Vgs. =. 8V. I. ,. D. Vgs. =. 8V. nte. nt. r. -15. e. r. r. -15. r. Cu. Cu. n. -20. n. ai. -20. r. air. D. D. -25. -25. -30

0 0 Vgs = -5V Vgs = - 5V -5 -5 Vgs = 0V Vgs = 0V ) A( A Vgs = 5V -10 Vgs = 5V ( -10 I , D Vgs = 8V I , D Vgs = 8V nte nt r -15 e r r -15 r Cu Cu n -20 n ai -20 r air D D -25 -25 -30

Modelllinie für dieses Datenblatt

Textversion des Dokuments

0 0 Vgs = -5V Vgs = - 5V -5 -5 Vgs = 0V Vgs = 0V ) A( A Vgs = 5V -10 Vgs = 5V ( -10 I , D Vgs = 8V I , D Vgs = 8V nte nt r -15 e r r -15 r Cu Cu n -20 n ai -20 r air D D -25 -25 -30 -30 -4 -3 -2 -1 0 -4 -3 -2 -1 0 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Figure 9. 3rd quadrant characteristics at TJ = -55°C Figure 10. 3rd quadrant characteristics at TJ = 25°C 0 14 -5 12 ) A( 10 -10 I , D J) nt m 8 ( e r -15 S r S E O 6 Cu Vgs = - 5V n -20 air Vgs = 0V 4 D Vgs = 5V -25 Vgs = 8V 2 -30 0 -4 -3 -2 -1 0 0 100 200 300 400 500 600 Drain-Source Voltage, V Drain-Source Voltage, V DS (V) DS (V) Figure 11. 3rd quadrant characteristics at TJ = 175°C Figure 12. Typical stored energy in COSS at VGS = 0V Datasheet: UF3C065080B7S Rev. A, November 2020 7