Datasheet MMBT2369L, MMBT2369AL (ON Semiconductor)
| Hersteller | ON Semiconductor |
| Beschreibung | Switching Transistors NPN Silicon |
| Seiten / Seite | 7 / 1 — NPN Silicon. Features. www.onsemi.com. MARKING. DIAGRAM. SOT−23. CASE … |
| Revision | 11 |
| Dateiformat / Größe | PDF / 203 Kb |
| Dokumentensprache | Englisch |
NPN Silicon. Features. www.onsemi.com. MARKING. DIAGRAM. SOT−23. CASE 318. MAXIMUM RATINGS. STYLE 6. Rating. Symbol. Value. Unit
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Textversion des Dokuments
link to page 1 link to page 1 MMBT2369L, MMBT2369AL Switching Transistors
NPN Silicon Features
• S Prefix for Automotive and Other Applications Requiring Unique
www.onsemi.com
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
MARKING
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
DIAGRAM
Compliant*
SOT−23 CASE 318
xxx MG G
MAXIMUM RATINGS STYLE 6
1
Rating Symbol Value Unit
xxx = M1J or 1JA Collector−Emitter Voltage V M = Date Code* CEO 15 Vdc G = Pb−Free Package Collector−Emitter Voltage VCES 40 Vdc (Note: Microdot may be in either location) Collector−Base Voltage VCBO 40 Vdc *Date Code orientation and/or overbar may vary depending upon manufacturing location. Emitter−Base Voltage VEBO 4.5 Vdc Collector Current − Continuous IC 200 mAdc COLLECTOR
THERMAL CHARACTERISTICS
3
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board PD (Note 1) T 1 A = 25°C 225 mW Derate above 25°C 1.8 mW/°C BASE Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W 2 Total Device Dissipation Alumina P EMITTER D Substrate, (Note 2) TA = 25°C 300 mW Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
ORDERING INFORMATION
Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the
Device Package Shipping
† device. If any of these limits are exceeded, device functionality should not be MMBT2369LT1G SOT−23 3,000 / assumed, damage may occur and reliability may be affected. (Pb−Free) Tape & Reel 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MMBT2369LT3G SOT−23 10,000 / (Pb−Free) Tape & Reel SMMBT2369LT1G SOT−23 3,000 / (Pb−Free) Tape & Reel MMBT2369ALT1G SOT−23 3,000 / (Pb−Free) Tape & Reel SMMBT2369ALT1G SOT−23 3,000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2018 − Rev. 11 MMBT2369LT1/D
NPN Silicon Features
• S Prefix for Automotive and Other Applications Requiring Unique
www.onsemi.com
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
MARKING
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
DIAGRAM
Compliant*
SOT−23 CASE 318
xxx MG G
MAXIMUM RATINGS STYLE 6
1
Rating Symbol Value Unit
xxx = M1J or 1JA Collector−Emitter Voltage V M = Date Code* CEO 15 Vdc G = Pb−Free Package Collector−Emitter Voltage VCES 40 Vdc (Note: Microdot may be in either location) Collector−Base Voltage VCBO 40 Vdc *Date Code orientation and/or overbar may vary depending upon manufacturing location. Emitter−Base Voltage VEBO 4.5 Vdc Collector Current − Continuous IC 200 mAdc COLLECTOR
THERMAL CHARACTERISTICS
3
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board PD (Note 1) T 1 A = 25°C 225 mW Derate above 25°C 1.8 mW/°C BASE Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W 2 Total Device Dissipation Alumina P EMITTER D Substrate, (Note 2) TA = 25°C 300 mW Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W
ORDERING INFORMATION
Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the
Device Package Shipping
† device. If any of these limits are exceeded, device functionality should not be MMBT2369LT1G SOT−23 3,000 / assumed, damage may occur and reliability may be affected. (Pb−Free) Tape & Reel 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. MMBT2369LT3G SOT−23 10,000 / (Pb−Free) Tape & Reel SMMBT2369LT1G SOT−23 3,000 / (Pb−Free) Tape & Reel MMBT2369ALT1G SOT−23 3,000 / (Pb−Free) Tape & Reel SMMBT2369ALT1G SOT−23 3,000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2018 − Rev. 11 MMBT2369LT1/D