Datasheet ZLLS400 (Diodes) - 3
| Hersteller | Diodes |
| Beschreibung | 40V SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| Seiten / Seite | 6 / 3 — ZLLS400. Electrical Characteristics. Characteristic Symbol. Min. Typ. … |
| Dateiformat / Größe | PDF / 226 Kb |
| Dokumentensprache | Englisch |
ZLLS400. Electrical Characteristics. Characteristic Symbol. Min. Typ. Max. Unit. Test. Condition. Operational efficiency chart
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ZLLS400 Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V(BR)R 40 60 - V IR = 200μA - 305 360 IF = 50mA - 335 390 IF = 100mA - 395 450 IF = 250mA - 445 500 I Forward Voltage (Note 4) F = 400mA VF mV - 550 630 IF = 750mA - 620 710 IF = 1A - 710 800 IF = 1.5A - 405 - IF = 400mA, TA = 100°C - 6 10 V Reverse Current R = 30V IR μA - 370 - VR = 30V, TA = 85°C Diode Capacitance CD - 15 - pF f = 1MHz, VR = 30V Reverse Recovery Time trr - 3 - ns Switched from IF = 500mA to VR = 5.5V Measured @ IR = 50mA Reverse Recovery Charge Qrr - 210 - pC di /d t = 500mA / ns Rsource = 6Ω; Rload= 10Ω Notes: 4. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle 2%.
Operational efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS series diodes in applications requiring higher voltage, higher temperature operation. Circuits requiring low voltage low temperature operation will benefit from using Zetex low VF ZHCS series diodes. ZLLS400 3 of 6 February 2012 Document number: DS33226 Rev. 7 - 2
www.diodes.com
© Diodes Incorporated
@TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage V(BR)R 40 60 - V IR = 200μA - 305 360 IF = 50mA - 335 390 IF = 100mA - 395 450 IF = 250mA - 445 500 I Forward Voltage (Note 4) F = 400mA VF mV - 550 630 IF = 750mA - 620 710 IF = 1A - 710 800 IF = 1.5A - 405 - IF = 400mA, TA = 100°C - 6 10 V Reverse Current R = 30V IR μA - 370 - VR = 30V, TA = 85°C Diode Capacitance CD - 15 - pF f = 1MHz, VR = 30V Reverse Recovery Time trr - 3 - ns Switched from IF = 500mA to VR = 5.5V Measured @ IR = 50mA Reverse Recovery Charge Qrr - 210 - pC di /d t = 500mA / ns Rsource = 6Ω; Rload= 10Ω Notes: 4. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle 2%.
Operational efficiency chart
The operational efficiency chart indicates the beneficial use of the ZLLS series diodes in applications requiring higher voltage, higher temperature operation. Circuits requiring low voltage low temperature operation will benefit from using Zetex low VF ZHCS series diodes. ZLLS400 3 of 6 February 2012 Document number: DS33226 Rev. 7 - 2
www.diodes.com
© Diodes Incorporated