Datasheet 2N6027, 2N6028 (ON Semiconductor) - 3

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2N6027, 2N6028 ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Fig. No. Symbol Min Typ Max Unit
Peak Current* 2,9,11 IP mA (VS = 10 Vdc, RG = 1 MW) 2N6027 − 1.25 2.0 2N6028 − 0.08 0.15 (VS = 10 Vdc, RG = 10 kW) 2N6027 − 4.0 5.0 2N6028 − 0.70 1.0 Offset Voltage* 1 VT V (VS = 10 Vdc, RG = 1 MW) 2N6027 0.2 0.70 1.6 2N6028 0.2 0.50 0.6 (VS = 10 Vdc, RG = 10 kW) (Both Types) 0.2 0.35 0.6 Valley Current* 1,4,5 IV mA (VS = 10 Vdc, RG = 1 MW) 2N6027 − 18 50 2N6028 − 18 25 (VS = 10 Vdc, RG = 10 k W) 2N6027 70 150 − 2N6028 25 150 − (VS = 10 Vdc, RG = 200 W) 2N6027 1.5 − − 2N6028 1.0 − − mA Gate to Anode Leakage Current* − IGAO nAdc (VS = 40 Vdc, TA = 25°C, Cathode Open) − 1.0 10 (VS = 40 Vdc, TA = 75°C, Cathode Open) − 3.0 − Gate to Cathode Leakage Current − IGKS − 5.0 50 nAdc (VS = 40 Vdc, Anode to Cathode Shorted) Forward Voltage* 1,6 VF − 0.8 1.5 V (IF = 50 mA Peak) (Note 4) Peak Output Voltage* 3,7 Vo 6.0 11 − V (VG = 20 Vdc, CC = 0.2 mF) Pulse Voltage Rise Time 3 tr − 40 80 ns (VB = 20 Vdc, CC = 0.2 mF) *Indicates JEDEC Registered Data 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. +VB IA V I R1 R2 A A A RG = R2 R1 + R2 G R1 + −VP − V V S = V S R1 + R2 B R V V G T = VP − VS AK R1 VAK VS K VF VV IA I I P I I V F GAO 1A − Programmable Unijunction 1B − Equivalent Test Circuit for with Program" Resistors Figure 1A used for electrical IC − Electrical Characteristics R1 and R2 characteristics testing (also see Figure 2)
Figure 1. Electrical Characterization
+VB − Adjust 100 k I +V P (SENSE) for 1.0% 100 mV = 1.0 nA 510 k V Turn−on + 16 k o Threshold 6.0 V 2N5270 R VB RG = R/2 0.01 mF V C S = VB/2 C v 27 k o (See Figure 1) Scope 20 W 0.6 V t Put tf 20 Under R Test
Figure 2. Peak Current (IP) Test Circuit Figure 3. Vo and tr Test Circuit http://onsemi.com 3