Datasheet 2N6052, 2N6058, 2N6059 (ON Semiconductor) - 3

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2N6052
1.0 0.7 D = 0.5 0.5 THERMAL 0.3 0.2 0.2 0.1 R P θJC(t) = r(t) RθJC (pk) 0.1 TRANSIENT 0.05 RθJC = 1.17°C/W MAX 0.07 ANCE (NORMALIZED) D CURVES APPLY FOR POWER 0.02 0.05 PULSE TRAIN SHOWN t1 READ TIME AT t1 t RESIST 0.03 2 0.01 , EFFECTIVE TJ(pk) − TC = P(pk) θJC(t) 0.02 DUTY CYCLE, D = t SINGLE 1/t2 r(t) PULSE 0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME (ms)
Figure 4. Thermal Response ACTIVE−REGION SAFE OPERATING AREA
50 50 0.1 ms 0.1 ms 20 20 10 (AMP) 10 (AMP) 5.0 0.5 ms 5.0 0.5 ms 1.0 ms 1.0 ms CURRENT 2.0 CURRENT 2.0 5.0 ms 5.0 ms OR 1.0 OR 1.0 TJ = 200°C TJ = 200°C 0.5 0.5 SECOND BREAKDOWN LIM- ITED SECOND BREAKDOWN LIMITED , COLLECT BONDING WIRE LIMITED 0.2 , COLLECT 0.2 BONDING WIRE LIMITED I C d I C d THERMAL LIMITATION 0.1 @T THERMAL LIMITATION C = 25°C (SINGLE PULSE) c 0.1 c @TC = 25°C (SINGLE PULSE) 0.05 0.05 10 20 30 50 70 100 10 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6058 Figure 6. 2N6052, 2N6059
There are two limitations on the power handling ability of pulse limits are valid for duty cycles to 10% provided TJ(pk) a transistor: average junction temperature and second v 200_C; TJ(pk) may be calculated from the data in Figure breakdown. Safe operating area curves indicate IC − VCE 4. At high case temperatures, thermal limitations will reduce limits of the transistor that must be observed for reliable the power that can be handled to values less than the operation; i.e., the transistor must not be subjected to greater limitations imposed by second breakdown. dissipation than the curves indicate. The data of Figures 5, 6, and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown
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