Datasheet TIPL762, TIPL762A (Bourns) - 4

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE vs vs COLLECTOR CURRENT BASE CURRENT
TCP762AE TCP762AH
100 5·0 V = 5 V T = 125°C I = 1 A CE C - V C e T = 25°C I = 2 A C g C T = -65°C lta I = 4 A C C in 4·0 a Vo I = 6 A n C o t G ti T = 25°C C n ra rre tu u 3·0 C C r Sa 10 l D itte ica 2·0 yp r-Em T to - c FE lle h - Co 1·0 ) (sat E C V
E
1·0 0 0·1 1·0 10 0 0·5 1·0 1·5 2·0 2·5 I - Collector Current - A I - Base Current - A C B Figure 3. Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE vs vs BASE CURRENT BASE CURRENT
TCP762AI TCP762AJ
5·0 1·2 - V I = 1 A C T = 25°C
OBSOLET
e C g I = 2 A - V C e lta I = 4 A g C lta Vo 4·0 I = 6 A 1·1 n C o Vo ti T = 100°C n C o ra ti tu ra 3·0 tu 1·0 r Sa r Sa itte itte r-Em 2·0 m 0·9 to -E c e s lle - Ba I = 6 A ) C - Co 1·0 0·8 ) (sat I = 4 A E C (sat B E V I = 2 A C C V I = 1 A C 0 0·7 0 0·5 1·0 1·5 2·0 2·5 0 0·2 0·4 0·6 0·8 1·0 1·2 1·4 1·6 1·8 2·0 I - Base Current - A I - Base Current - A B B Figure 5. Figure 6.
AUGUST 1978 - REVISED SEPTEMBER 2002 4 Specifications are subject to change without notice.