Datasheet C2M0045170P (Wolfspeed)
| Hersteller | Wolfspeed |
| Beschreibung | Silicon Carbide Power MOSFET 1700 V 72 A 45 mΩ |
| Seiten / Seite | 10 / 1 — C2M0045170P. I D@ 25˚C. Silicon Carbide Power MOSFET. DS(on). C2MTM … |
| Dateiformat / Größe | PDF / 1.3 Mb |
| Dokumentensprache | Englisch |
C2M0045170P. I D@ 25˚C. Silicon Carbide Power MOSFET. DS(on). C2MTM MOSFET Technology. Features. Package. TAB. Drain. Benefits
Modelllinie für dieses Datenblatt
Textversion des Dokuments
V
1700 V
DS C2M0045170P I D@ 25˚C
72 A
R
45 mΩ
Silicon Carbide Power MOSFET DS(on) C2MTM MOSFET Technology
N-Channel Enhancement Mode
Features Package
• Optimized package with separate driver source pin
TAB
• 8mm of creepage distance between drain and source
Drain
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Halogen Free, RoHS Compliant
Benefits Drain
•
(Pin 1, TAB)
Reduce switching losses and minimize gate ringing • Higher system efficiency
1 2 3 4
•
D S S G
Reduce cooling requirements • Increase power density • Increase system switching frequency
Gate (Pin 4) Applications Driver Power Source Source
•
(Pin 3) (Pin 2)
1500V Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters
Part Number Package Marking
• Pulsed Power Applications C2M0045170P TO-247-4 Plus C2M0045170P
Maximum Ratings
(T = 25 ˚C unless otherwise specified) C
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage (dynamic) -10/+25 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (Static) -5/+20 V Static Note: 2 72 V I GS =20 V, TC = 25˚C Fig. 19 D Continuous Drain Current A 48 VGS =20 V, TC = 100˚C ID(pulse) Pulsed Drain Current 160 A Pulse width tP limited by Tjmax Fig. 22 P Power Dissipation 520 W T =25˚C, T = 150 ˚C Fig. 20 D C J T , T Operating Junction and Storage Temperature -40 to J stg +150 ˚C T Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s L Note (1): When using MOSFET Body Diode V = -5V/+25V GSmax Note (2): MOSFET can also safely operate at 0/+20V
1
C2M0045170P Rev. -, 04-2018
1700 V
DS C2M0045170P I D@ 25˚C
72 A
R
45 mΩ
Silicon Carbide Power MOSFET DS(on) C2MTM MOSFET Technology
N-Channel Enhancement Mode
Features Package
• Optimized package with separate driver source pin
TAB
• 8mm of creepage distance between drain and source
Drain
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Halogen Free, RoHS Compliant
Benefits Drain
•
(Pin 1, TAB)
Reduce switching losses and minimize gate ringing • Higher system efficiency
1 2 3 4
•
D S S G
Reduce cooling requirements • Increase power density • Increase system switching frequency
Gate (Pin 4) Applications Driver Power Source Source
•
(Pin 3) (Pin 2)
1500V Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters
Part Number Package Marking
• Pulsed Power Applications C2M0045170P TO-247-4 Plus C2M0045170P
Maximum Ratings
(T = 25 ˚C unless otherwise specified) C
Symbol Parameter Value Unit Test Conditions Note
VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage (dynamic) -10/+25 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (Static) -5/+20 V Static Note: 2 72 V I GS =20 V, TC = 25˚C Fig. 19 D Continuous Drain Current A 48 VGS =20 V, TC = 100˚C ID(pulse) Pulsed Drain Current 160 A Pulse width tP limited by Tjmax Fig. 22 P Power Dissipation 520 W T =25˚C, T = 150 ˚C Fig. 20 D C J T , T Operating Junction and Storage Temperature -40 to J stg +150 ˚C T Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s L Note (1): When using MOSFET Body Diode V = -5V/+25V GSmax Note (2): MOSFET can also safely operate at 0/+20V
1
C2M0045170P Rev. -, 04-2018