Datasheet C2M1000170J (Wolfspeed) - 3
| Hersteller | Wolfspeed |
| Beschreibung | Silicon Carbide Power MOSFET 1700 V 5.3 A 1.0 Ω |
| Seiten / Seite | 10 / 3 — Typical Performance. Conditions:. VGS = 20 V. TJ = -55 °C. TJ = 25 °C. tp … |
| Dateiformat / Größe | PDF / 1.1 Mb |
| Dokumentensprache | Englisch |
Typical Performance. Conditions:. VGS = 20 V. TJ = -55 °C. TJ = 25 °C. tp < 200 µs. VGS = 18 V. GS = 18 V. (A). GS = 16 V. VGS = 14 V
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Typical Performance 6 6 Conditions: VGS = 20 V Conditions: VGS = 20 V TJ = -55 °C TJ = 25 °C V 5 tp < 200 µs VGS = 18 V 5 tp < 200 µs GS = 18 V (A) V (A) GS = 16 V V 4 4 GS = 16 V VGS = 14 V nt, I DS nt, I DS VGS = 14 V 3 3 VGS = 12 V 2 2 in-Source Curre VGS = 12 V in-Source Curre VGS = 10 V Dra Dra 1 1 VGS = 10 V 0 0 0 4 8 12 16 20 0 4 8 12 16 20 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 °C Figure 2. Output Characteristics TJ = 25 °C
6 2.5 Conditions: Conditions: T VGS = 20 V J = 150 °C IDS = 2 A tp < 200 µs VGS = 18 V VGS = 20 V 5 V 2.0 tp < 200 µs GS = 16 V VGS = 14 V .) (A) 4 VGS = 12 V (P.U n nt, I DS O 1.5 VGS = 10 V 3 1.0 2 in-Source Curre On Resistance, R DS Dra 0.5 1 0 0.0 0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V)
Figure 3. Output Characteristics TJ = 150 °C Figure 4. Normalized On-Resistance vs. Temperature
3.5 3.5 Conditions: Conditions: VGS = 20 V IDS = 2 A 3.0 tp < 200 µs 3.0 tp < 200 µs s) 2.5 s) 2.5 (Ohm TJ = 150 °C (Ohm n n O 2.0 O 2.0 VGS = 14 V 1.5 1.5 VGS = 16 V TJ = 25 °C V 1.0 1.0 GS = 18 V On Resistance, R DS TJ = -55 °C On Resistance, R DS VGS = 20 V 0.5 0.5 0.0 0.0 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 Drain-Source Current, IDS (A) Junction Temperature, TJ (°C)
Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature For Various Temperatures For Various Gate Voltage
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C2M1000170J Rev. B, 12-2017
Figure 1. Output Characteristics TJ = -55 °C Figure 2. Output Characteristics TJ = 25 °C
6 2.5 Conditions: Conditions: T VGS = 20 V J = 150 °C IDS = 2 A tp < 200 µs VGS = 18 V VGS = 20 V 5 V 2.0 tp < 200 µs GS = 16 V VGS = 14 V .) (A) 4 VGS = 12 V (P.U n nt, I DS O 1.5 VGS = 10 V 3 1.0 2 in-Source Curre On Resistance, R DS Dra 0.5 1 0 0.0 0 4 8 12 16 20 -50 -25 0 25 50 75 100 125 150 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V)
Figure 3. Output Characteristics TJ = 150 °C Figure 4. Normalized On-Resistance vs. Temperature
3.5 3.5 Conditions: Conditions: VGS = 20 V IDS = 2 A 3.0 tp < 200 µs 3.0 tp < 200 µs s) 2.5 s) 2.5 (Ohm TJ = 150 °C (Ohm n n O 2.0 O 2.0 VGS = 14 V 1.5 1.5 VGS = 16 V TJ = 25 °C V 1.0 1.0 GS = 18 V On Resistance, R DS TJ = -55 °C On Resistance, R DS VGS = 20 V 0.5 0.5 0.0 0.0 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 Drain-Source Current, IDS (A) Junction Temperature, TJ (°C)
Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature For Various Temperatures For Various Gate Voltage
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C2M1000170J Rev. B, 12-2017