Datasheet C2M0080170P (Wolfspeed) - 6
| Hersteller | Wolfspeed |
| Beschreibung | Silicon Carbide Power MOSFET 1700 V 40 A 80 mΩ |
| Seiten / Seite | 10 / 6 — Typical Performance. 300. Conditions:. (A). TJ ≤ 150 °C. ) 250. (DC. , I … |
| Dateiformat / Größe | PDF / 1.2 Mb |
| Dokumentensprache | Englisch |
Typical Performance. 300. Conditions:. (A). TJ ≤ 150 °C. ) 250. (DC. , I DS 30. rent. er, P tot 200. Cur 25. 150. ino 20. pated Pow. ont 15. Dissi
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Typical Performance 45 300 Conditions: Conditions: 40 (A) TJ ≤ 150 °C TJ ≤ 150 °C ) ) 250 (DC 35 (W , I DS 30 rent er, P tot 200 Cur 25 us 150 ino 20 pated Pow ont 15 Dissi ce C 100 um 10 in-Sour axim 50 5 M Dra 0 0 -55 -30 -5 20 45 70 95 120 145 -55 -30 -5 20 45 70 95 120 145 Case Temperature, TC (°C) Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Case Temperature
100.00 1 ) 10 µs W C/ Limited by RDS On 100 µs o ( 0.5 10.00 (A) 1 ms 100E-3 0.3 100 ms , I DS 0.1 rent pedance, Z thJC ur 0.05 1.00 10E-3 0.02 ce C ase Im 0.01 in-Sour 0.10 1E-3 SinglePulse Dra Conditions: T Junction To C C = 25 °C D = 0, Parameter: t p 100E-6 0.01 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 0.1 1 10 100 1000 Time, t Drain-Source Voltage, V p (s) DS (V)
Figure 21. Transient Thermal Impedance Figure 22. Safe Operating Area (Junction - Case)
0.8 1.5 Conditions: Conditions: T T J = 25 °C J = 25 °C V V DD = 900 V DD = 1200 V R R G(ext) = 2.5 Ω 1.2 G(ext) = 2.5 Ω 0.6 V V GS = -5V/+20 V E GS = -5V/+20 V Total FWD = C2M0080170P FWD = C2M0080170P L = 200 μH L = 200 μH J) E 0.9 Total (m 0.4 EOn E 0.6 On itching Loss itching Loss (uJ) Sw Sw 0.2 0.3 EOff EOff 0.0 0.0 0 10 20 30 40 50 0 10 20 30 40 50 Drain to Source Current, I Drain to Source Current, I DS (A) DS (A)
Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V = 900V) Drain Current (V = 1200V) DD DD
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C2M0080170P Rev. A, 05-2018
Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Case Temperature
100.00 1 ) 10 µs W C/ Limited by RDS On 100 µs o ( 0.5 10.00 (A) 1 ms 100E-3 0.3 100 ms , I DS 0.1 rent pedance, Z thJC ur 0.05 1.00 10E-3 0.02 ce C ase Im 0.01 in-Sour 0.10 1E-3 SinglePulse Dra Conditions: T Junction To C C = 25 °C D = 0, Parameter: t p 100E-6 0.01 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 0.1 1 10 100 1000 Time, t Drain-Source Voltage, V p (s) DS (V)
Figure 21. Transient Thermal Impedance Figure 22. Safe Operating Area (Junction - Case)
0.8 1.5 Conditions: Conditions: T T J = 25 °C J = 25 °C V V DD = 900 V DD = 1200 V R R G(ext) = 2.5 Ω 1.2 G(ext) = 2.5 Ω 0.6 V V GS = -5V/+20 V E GS = -5V/+20 V Total FWD = C2M0080170P FWD = C2M0080170P L = 200 μH L = 200 μH J) E 0.9 Total (m 0.4 EOn E 0.6 On itching Loss itching Loss (uJ) Sw Sw 0.2 0.3 EOff EOff 0.0 0.0 0 10 20 30 40 50 0 10 20 30 40 50 Drain to Source Current, I Drain to Source Current, I DS (A) DS (A)
Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V = 900V) Drain Current (V = 1200V) DD DD
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C2M0080170P Rev. A, 05-2018