Datasheet STD30NF06 (STMicroelectronics)
| Hersteller | STMicroelectronics |
| Beschreibung | N-Channel 60V - 0.020 Ohm - 28A - DPAK StripFET(TM) II POWER MOSFET |
| Seiten / Seite | 10 / 1 — STD30NF06. TYPE. VDSS. RDS(on). IPAK. DPAK. TO-251. TO-252. DESCRIPTION. … |
| Dateiformat / Größe | PDF / 472 Kb |
| Dokumentensprache | Englisch |
STD30NF06. TYPE. VDSS. RDS(on). IPAK. DPAK. TO-251. TO-252. DESCRIPTION. INTERNAL SCHEMATIC DIAGRAM. APPLICATIONS. ABSOLUTE MAXIMUM RATINGS
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STD30NF06
N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET™ II POWER MOSFET
TYPE VDSS RDS(on) ID
STD30NF06 60 V <0.028 Ω 28 A ■ TYPICAL RDS(on) = 0.020Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED 3 3 ■ THROUGH-HOLE IPAK (TO-251) POWER 2 1 PACKAGE IN TUBE (SUFFIX “-1") 1 ■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL
IPAK DPAK TO-251 TO-252
(SUFFIX “T4") (Suffix “-1”) (Suffix “T4”)
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip- based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged
INTERNAL SCHEMATIC DIAGRAM
avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED ■ MOTOR CONTROL , AUDIO AMPLIFIERS ■ SOLENOID AND RELAY DRIVERS ■ DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 28 A ID Drain Current (continuous) at TC = 100°C 20 A IDM(•) Drain Current (pulsed) 112 A Ptot Total Dissipation at TC = 25°C 70 W Derating Factor 0.47 W/°C dv/dt (1) Peak Diode Recovery voltage slope 10 V/ns EAS (2) Single Pulse Avalanche Energy 230 mJ Tstg Storage Temperature -55 to 175 °C Tj Max. Operating Junction Temperature (•) Pulse width limited by safe operating area. (1) ISD ≤28A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 15A, VDD = 30V March 2002 1/10 .
N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET™ II POWER MOSFET
TYPE VDSS RDS(on) ID
STD30NF06 60 V <0.028 Ω 28 A ■ TYPICAL RDS(on) = 0.020Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ 100% AVALANCHE TESTED 3 3 ■ THROUGH-HOLE IPAK (TO-251) POWER 2 1 PACKAGE IN TUBE (SUFFIX “-1") 1 ■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL
IPAK DPAK TO-251 TO-252
(SUFFIX “T4") (Suffix “-1”) (Suffix “T4”)
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip- based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged
INTERNAL SCHEMATIC DIAGRAM
avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED ■ MOTOR CONTROL , AUDIO AMPLIFIERS ■ SOLENOID AND RELAY DRIVERS ■ DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 28 A ID Drain Current (continuous) at TC = 100°C 20 A IDM(•) Drain Current (pulsed) 112 A Ptot Total Dissipation at TC = 25°C 70 W Derating Factor 0.47 W/°C dv/dt (1) Peak Diode Recovery voltage slope 10 V/ns EAS (2) Single Pulse Avalanche Energy 230 mJ Tstg Storage Temperature -55 to 175 °C Tj Max. Operating Junction Temperature (•) Pulse width limited by safe operating area. (1) ISD ≤28A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 15A, VDD = 30V March 2002 1/10 .