Datasheet STD30NF06L (STMicroelectronics)
| Hersteller | STMicroelectronics |
| Beschreibung | N-Channel 60V - 0.022Ω - 35A DPAK/IPAK STripFET Power MOSFET |
| Seiten / Seite | 10 / 1 — STD30NF06L. TYPE. VDSS. RDS(on). IPAK. DPAK. DESCRIPTION. INTERNAL … |
| Dateiformat / Größe | PDF / 476 Kb |
| Dokumentensprache | Englisch |
STD30NF06L. TYPE. VDSS. RDS(on). IPAK. DPAK. DESCRIPTION. INTERNAL SCHEMATIC DIAGRAM. APPLICATIONS. ABSOLUTE MAXIMUM RATINGS. Symbol
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STD30NF06L
N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK STripFET™ POWER MOSFET
TYPE VDSS RDS(on) ID
STD30NF06L 60 V <0.028Ω 35 A ■ TYPICAL RDS(on) = 0.022Ω ■ EXCEPTIONAL dv/dt CAPABILITY 3 3 2 ■ LOGIC LEVEL GATE DRIVE 1 1 ■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL ■ ADD SUFFIX “-1” FOR ORDERING IN IPAK
IPAK DPAK
■ CHARACTERIZATION ORIENTED FOR AUTOMOTIVE APPLICATIONS
DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature
INTERNAL SCHEMATIC DIAGRAM
Size™” strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 35 A ID Drain Current (continuous) at TC = 100°C 25 A IDM (l) Drain Current (pulsed) 140 A PTOT Total Dissipation at TC = 25°C 70 W Derating Factor 0.46 W/°C dv/dt (1) Peak Diode Recovery voltage slope 25 V/ns Tstg Storage Temperature – 55 to 175 °C Tj Operating Junction Temperature (1) ISD ≤38A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (●) Pulse width limited by safe operating area July 2002 1/10
N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK STripFET™ POWER MOSFET
TYPE VDSS RDS(on) ID
STD30NF06L 60 V <0.028Ω 35 A ■ TYPICAL RDS(on) = 0.022Ω ■ EXCEPTIONAL dv/dt CAPABILITY 3 3 2 ■ LOGIC LEVEL GATE DRIVE 1 1 ■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL ■ ADD SUFFIX “-1” FOR ORDERING IN IPAK
IPAK DPAK
■ CHARACTERIZATION ORIENTED FOR AUTOMOTIVE APPLICATIONS
DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature
INTERNAL SCHEMATIC DIAGRAM
Size™” strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 35 A ID Drain Current (continuous) at TC = 100°C 25 A IDM (l) Drain Current (pulsed) 140 A PTOT Total Dissipation at TC = 25°C 70 W Derating Factor 0.46 W/°C dv/dt (1) Peak Diode Recovery voltage slope 25 V/ns Tstg Storage Temperature – 55 to 175 °C Tj Operating Junction Temperature (1) ISD ≤38A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (●) Pulse width limited by safe operating area July 2002 1/10