Datasheet TCR5RG (Toshiba) - 7
| Hersteller | Toshiba |
| Beschreibung | Ultra high Ripple rejection ratio, 500 mA CMOS Low Dropout Regulator in ultra small package |
| Seiten / Seite | 10 / 7 — TCR5RG series. 9. Application Note 9.1. Recommended Application Circuit. … |
| Dateiformat / Größe | PDF / 483 Kb |
| Dokumentensprache | Englisch |
TCR5RG series. 9. Application Note 9.1. Recommended Application Circuit. CONTROL. GND. VIN. OUT. 1 μF. 9.2. Power Dissipation. 1000. 800. (mW
Modelllinie für dieses Datenblatt
TCR5RG
Textversion des Dokuments
TCR5RG series 9. Application Note 9.1. Recommended Application Circuit CONTROL GND VIN V OUT 1 μF 1 μF
The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used).
9.2. Power Dissipation
Board-mounted power dissipation ratings are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 % Through hole: diameter 0.5 mm x 24
1000 ) 800 (mW 600 ion PD pat 400 dissi er 200 Pow 0 −40 0 40 80 120 Ambient temperature Ta (°C)
© 2020 2020-12-18 Toshiba Electronic Devices & Storage Corporation
The figure above shows the recommended configuration for using a Low-Dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used).
9.2. Power Dissipation
Board-mounted power dissipation ratings are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 % Through hole: diameter 0.5 mm x 24
1000 ) 800 (mW 600 ion PD pat 400 dissi er 200 Pow 0 −40 0 40 80 120 Ambient temperature Ta (°C)
© 2020 2020-12-18 Toshiba Electronic Devices & Storage Corporation