Datasheet MBRD835L, SBRD8835L (ON Semiconductor) - 4

MBRD835L, SBRD8835L TYPICAL CHARACTERISTICS
TJ = 25°C TYPICAL MAXIMUM 1000 ANCE (pF) ACIT C, CAP 100 1 10 VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Maximum and Typical Capacitance
16 8 TJ = 125°C RJA = 40°C/W (AMPS) 14.4 TJ = 125°C (AMPS) 7 dc SURFACE MOUNTED ON 12.8 RJA = 6°C/W dc 6 MINIMUM RECOMMENDED 11.2 (RESISTIVE LOAD) PAD SIZE CURRENT CURRENT 5 (RESISTIVE LOAD) 9.6 SQUARE WAVE IPK (CAPACITIVE ARD IPK + (CAPACITIVE ARD SQUARE WAVE + 5 W 8 5 I LOAD) I AV AV LOAD) W 4 FOR 6.4 FOR 3 4.8 10 10 2 VERAGE 3.2 VERAGE , A , A V) 1 1.6 20 V) 20 I F(A 0 I F(A 0 80 85 90 95 100 105 110 115 120 125 130 0 10 20 30 40 50 60 70 80 90 100 110 120 130 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)
Figure 6. Current Derating, Infinite Heatsink Figure 7. Current Derating
TTS) A 5 8 T R T 4.5 J = 125°C dc JA = 80°C/W J = 125°C (AMPS) TION (W (RESISTIVE LOAD) A 7 SURFACE MOUNTED ON 4 dc SQUARE WAVE MINIMUM RECOMMENDED I (CAPACITIVE 6 PK + 5 3.5 (RESISTIVE LOAD) PAD SIZE IAV LOAD) CURRENT 3 5 SQUARE WAVE (CAPACITIVE ARD IPK 10 + 5 W 2.5 IAV LOAD) 4 20 FOR 2 ARD POWER DISSIP W 3 1.5 10 2 VERAGE 1 , A V) 0.5 20 1 VERAGE FOR I F(A , A 0 V) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15 F(A T P A, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 8. Current Derating, Free Air Figure 9. Forward Power Dissipation www.onsemi.com 4