Datasheet AD8275 (Analog Devices) - 4

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AD8275 Data Sheet ABSOLUTE MAXIMUM RATINGS
midsupply, the total drive power is V
Table 3.
S/2 × IOUT, some of which is dissipated in the package and some of which is dissipated in the
Parameter Rating
load (VOUT × IOUT). Supply Voltage 18 V Output Short-Circuit Current See derating curve The difference between the total drive power and the load (Figure 3) power is the drive power dissipated in the package. Voltage at +IN, −IN Pins −VS + 40 V, +VS − 40 V PD = Quiescent Power + (Total Drive Power − Load Power) Voltage at REFx, +VS, − VS, SENSE, −VS − 0.5 V, +VS + 0.5 V and OUT Pins 2   P = (V × I ) VS OU V T OU V T + × – Current into REFx, +IN, −IN, SENSE, 3 mA D S S   2 R  L  RL and OUT Pins Storage Temperature Range −65°C to +130°C In single-supply operation with RL referenced to –VS, the worst Specified Temperature Range −40°C to +85°C case is VOUT = VS/2. Thermal Resistance (θJA) 135°C/W Airflow increases heat dissipation, effectively reducing θJA. In Package Glass Transition Temperature 140°C addition, more metal directly in contact with the package leads (TG) from metal traces, through holes, ground, and power planes ESD Human Body Model 2 kV reduces θJA. Stresses at or above those listed under Absolute Maximum Figure 3 shows the maximum safe power dissipation in the Ratings may cause permanent damage to the product. This is a package vs. the ambient temperature on a 4-layer JEDEC stress rating only; functional operation of the product at these standard board. or any other conditions above those indicated in the operational
2.00
section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may
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affect product reliability.
(W N 1.50 IO T MAXIMUM POWER DISSIPATION PA 1.25
The maximum safe power dissipation in the AD8275 package is
ISSI D 1.00
limited by the associated rise in junction temperature (T
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J) on
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the die. The plastic encapsulating the die locally reaches the
0.75
junction temperature. At approximately 140°C, which is the
M PO MU 0.50
glass transition temperature, the plastic changes its properties.
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Even temporarily exceeding this temperature limit can change
MA 0.25
003 the stresses that the package exerts on the die, permanently
0
07546- shifting the parametric performance of the AD8275. Exceeding
–40 –20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE (°C)
a junction temperature of 140°C for an extended period can result in changes in silicon devices, potentially causing failure. Figure 3. Maximum Power Dissipation vs. Ambient Temperature The still air thermal properties of the package and PCB (θ
ESD CAUTION
JA), the ambient temperature (TA), and the total power dissipated in the package (PD) determine the junction temperature of the die. The junction temperature is calculated as follows: TJ = TA + (PD × θJA) The power dissipated in the package (P D) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. The quiescent power is the voltage between the supply pins (VS) times the quiescent current (IS). Assuming the load (RL) is referenced to Rev. B | Page 4 of 16 Document Outline Features Applications Pin Configuration Typical Application General Description Revision History Specifications Absolute Maximum Ratings Maximum Power Dissipation ESD Caution Pin Configuration and Function Descriptions Typical Performance Characteristics Theory of Operation Basic Connection Power Supplies Reference Common-Mode Input Voltage Range Input Protection Configurations Applications Information Driving a Single-Ended ADC Differential Outputs Increasing Input Impedance AC Coupling Using the AD8275 as a Level Translator in a Data Acquisition System Outline Dimensions Ordering Guide