Datasheet HMC464 (Analog Devices) - 4

HMC464
v04.0308
GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz Outline Drawing
3 IP H S - C R IE IF L P M R A NOTES: E 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) W 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE O 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. BOND PAD METALIZATION: GOLD R & P
Pad Descriptions
A Pad Number Function Description Interface Schematic E 1 RFIN This pad is AC coupled and matched to 50 Ohms. IN L Gate Control 2 for amplifi er. +3V should be applied to 2 Vgg2 Vgg2 for nominal operation. RF output for amplifi er. Connect the DC 3 RFOUT & Vdd bias (Vdd) network to provide drain current (Idd). See application circuit herein. Gate Control 1 for amplifi er. Adjust between -2 to 0V 4 Vgg1 to achieve Idd= 290 mA. Die GND Die bottom must be connected to RF/DC ground. Bottom Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
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