Datasheet HMC453QS16G, 453QS16GE (Analog Devices)

HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features
The HMC453QS16G / HMC453QS16GE is ideal for Output IP3: +51 dBm applications requiring a high dynamic range amplifi er: 21.5 dB Gain @ 400 MHz • GSM, GPRS & EDGE 8 dB Gain @ 2100 MHz • CDMA & W-CDMA 45% PAE @ +32 dBm Pout • CATV/Cable Modem +25 dBm CDMA2000 Channel Power@ -45 dBc ACP 11 • Fixed Wireless & WLL Single +5V Supply Integrated Power Control (VPD) T QSOP16G SMT Package: 29.4 mm2
General Description Functional Diagram
The HMC453QS16G & HMC453QS16GE are high - SM dynamic range GaAs InGaP Heterojunction Bipo- S lar Transistor (HBT) 1.6 watt MMIC power amplifi ers R operating between 0.4 and 2.2 GHz. Packaged in a IE miniature 16 lead QSOP plastic package, the amp- IF lifi er gain is typically 21.5 dB at 0.4 GHz and 8 dB L at 2.1 GHz. Utilizing a minimum number of external P components and a single +5V supply, the amplifi er M output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/ R A current control. The high output IP3 and PAE E make the HMC453QS16G(E) ideal power amplifi ers W for Cellular/PCS/3G, WLL, ISM and Fixed Wireless O applications.
Electrical Specifi cations, T = +25°C, Vs= +5V, VPD = +5V [1] A
& P Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units R Frequency Range 400 - 410 450 - 496 810 - 960 1710 - 1990 2010 - 2170 MHz A Gain 19 21.5 18 20.5 12 15 6 9 6 8 dB E Gain Variation Over dB / 0.012 0.02 0.012 0.02 0.012 0.02 0.012 0.02 0.012 0.02 IN Temperature °C L Input Return Loss 12 15 12 10 15 dB Output Return Loss 10 10 15 13 18 dB Output Power for 1dB 29 32 29 32 29 32 28.5 31.5 30 33 dBm Compression (P1dB) Saturated Output 32.25 32.25 32.5 32 33.5 dBm Power (Psat) Output Third Order 44 47 47 50 46 49 44 50 48 51 dBm Intercept (IP3) [2] Noise Figure 7 8.5 7 7.5 6.5 dB Supply Current (Icq) 725 725 725 725 725 mA Control Current (IPD) 12 12 12 12 12 mA [1] Specifi cations and data refl ect HMC453QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. [2] Two-tone input power of -10 dBm per tone, 1 MHz spacing. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Phon -e25 : 7 0 81 -3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
11 - 178
w.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D