Datasheet HMC457QS16G, 457QS16GE (Analog Devices) - 8

HerstellerAnalog Devices
BeschreibungInGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz
Seiten / Seite10 / 8 — HMC457QS16G / 457QS16GE. InGaP HBT 1 WATT POWER. AMPLIFIER, 1.7 - 2.2 …
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HMC457QS16G / 457QS16GE. InGaP HBT 1 WATT POWER. AMPLIFIER, 1.7 - 2.2 GHz. Pin Descriptions. 11 - 247

HMC457QS16G / 457QS16GE InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Pin Descriptions 11 - 247

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HMC457QS16G / 457QS16GE
v03.0907
InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Pin Descriptions
Pin Number Function Description Interface Schematic Power supply voltage for the fi rst amplifi er stage. External 1 Vcc bypass capacitors are required as shown in the application schematic. 11 Ground: Backside of package has exposed metal ground 2, 4, 5, 7, GND slug that must also be connected to RF/DC ground. 9, 16 Vias under the device are required. T - SM 3 Vbias Power Supply for Bias Circuit S R IE This pin is AC coupled IF 6 RFIN and matched to 50 Ohms L P M Power control pin. For maximum power, this pin should be 8 Vpd connected to +5V. A higher voltage is not recommended. For R A lower idle current, this voltage can be reduced. E W O 10 - 15 RFOUT RF output and DC bias for the output stage. & P R A E IN L Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Pho - n 25 e: 7 0- 81 3 3 3 2 4 9- 3 F 470 ax: 978 0 • Order o - n 25 lin 0 e a-t 3373 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
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