Datasheet HMC559 (Analog Devices) - 6

HMC559
v03.0208
GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20 GHz Pad Descriptions
Pad Number Function Description Interface Schematic This pad is DC coupled and matched 1 IN to 50 Ohms. Blocking capacitor is required. 3 Gate control 2 for amplifi er. Attach bypass 2 Vgg2 capacitor per application circuit herein. For nominal operation +4V should be applied to Vgg2. IP H Low frequency termination. Attach bypass 3 ACG2 capacitor per application circuit herein. S - C R RF output for amplifi er. Connect DC bias (Vdd) network to IE 4 OUT & Vdd provide drain current (Idd). See application circuit herein. IF L Gate control 1 for amplifi er. Attach bypass capacitor per application circuit herein. Please P 5 Vgg1 follow “MMIC Amplifi er Biasing Procedure” M application note. R A Low frequency termination. Attach bypass 6 ACG1 E capacitor per application circuit herein. W O Die Bottom GND Die bottom must be connected to RF/DC ground. R & P A E IN L Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com
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