Datasheet HMC590LP5E (Analog Devices) - 4
| Hersteller | Analog Devices |
| Beschreibung | GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz |
| Seiten / Seite | 8 / 4 — HMC590LP5E. GaAs pHEMT MMIC 1 WATT. POWER AMPLIFIER, 6.0 - 9.5 GHz. Gain … |
| Dateiformat / Größe | PDF / 1.3 Mb |
| Dokumentensprache | Englisch |
HMC590LP5E. GaAs pHEMT MMIC 1 WATT. POWER AMPLIFIER, 6.0 - 9.5 GHz. Gain & Power vs. Supply Current @ 8 GHz
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Textversion des Dokuments
HMC590LP5E
v04.1219
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz
34 34 32 32 T 30 30 Psat(dBm) Psat(dBm) M 28 28 Gain (dBm), P1dB 26 (dBm), Psat Gain 26 P1dB P1dB 24 Psat P1dB 24 S - S 22 (dB), 22 (dB), R 20 GAIN 20 GAIN IE 18 18 520 620 720 820 6.5 7 7.5 LIF Idd SUPPLY CURRENT (mA) Vdd SUPPLY VOLTAGE (Vdc) P M
Reverse Isolation vs. Temperature, 7V @ 820 mA Power Dissipation
R A 0 6 E -10 5.5 W -20 (W) +25 C O ) +85 C 5 -30 -40 C (dB N IO -40 T 4.5 6 GHz 7 GHz LA DISSIPATION 8 GHz O -50 9 GHz IS 4 10 GHz R & P -60 A POWER 3.5 -70 E -80 3 6 6.5 7 7.5 8 8.5 9 9.5 10 -14 -10 -6 -2 2 6 10 14 LIN FREQUENCY (GHz) INPUT POWER (dBm)
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2.0 to 0 Vdc +6.5 824 RF Input Power (RFIN)(Vdd = +7.0 Vdc) +12 dBm +7.0 820 Channel Temperature 175 °C +7.5 815 Continuous Pdiss (T= 75 °C) Note: Amplifier will operate over full voltage ranges shown 5.98 W (derate 59.8 mW/°C above 75 °C) above Vgg adjusted to achieve Idd = 820 mA at +7.0V Thermal Resistance 16.72 °C/W (channel to package bottom) Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE ESD Sensitivity (HBM) Class 0B. Passed 200V OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Broadband Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature Psat vs. Temperature P1dB vs. Current Psat vs. Current Output IP3 vs. Temperature 7V @ 520 mA, Pin/Tone = -15 dBm Power Compression @ 8 GHz, 7V @ 820 mA Output IM3, 7V @ 820 mA Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz Reverse Isolation vs. Temperature, 7V @ 820 mA Power Dissipation Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Package Information Pin Descriptions Application Circuit Evaluation PCB List of Materials for Evaluation PCB 115927
v04.1219
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz
34 34 32 32 T 30 30 Psat(dBm) Psat(dBm) M 28 28 Gain (dBm), P1dB 26 (dBm), Psat Gain 26 P1dB P1dB 24 Psat P1dB 24 S - S 22 (dB), 22 (dB), R 20 GAIN 20 GAIN IE 18 18 520 620 720 820 6.5 7 7.5 LIF Idd SUPPLY CURRENT (mA) Vdd SUPPLY VOLTAGE (Vdc) P M
Reverse Isolation vs. Temperature, 7V @ 820 mA Power Dissipation
R A 0 6 E -10 5.5 W -20 (W) +25 C O ) +85 C 5 -30 -40 C (dB N IO -40 T 4.5 6 GHz 7 GHz LA DISSIPATION 8 GHz O -50 9 GHz IS 4 10 GHz R & P -60 A POWER 3.5 -70 E -80 3 6 6.5 7 7.5 8 8.5 9 9.5 10 -14 -10 -6 -2 2 6 10 14 LIN FREQUENCY (GHz) INPUT POWER (dBm)
Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2.0 to 0 Vdc +6.5 824 RF Input Power (RFIN)(Vdd = +7.0 Vdc) +12 dBm +7.0 820 Channel Temperature 175 °C +7.5 815 Continuous Pdiss (T= 75 °C) Note: Amplifier will operate over full voltage ranges shown 5.98 W (derate 59.8 mW/°C above 75 °C) above Vgg adjusted to achieve Idd = 820 mA at +7.0V Thermal Resistance 16.72 °C/W (channel to package bottom) Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE ESD Sensitivity (HBM) Class 0B. Passed 200V OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
4
Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Broadband Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature Psat vs. Temperature P1dB vs. Current Psat vs. Current Output IP3 vs. Temperature 7V @ 520 mA, Pin/Tone = -15 dBm Power Compression @ 8 GHz, 7V @ 820 mA Output IM3, 7V @ 820 mA Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz Reverse Isolation vs. Temperature, 7V @ 820 mA Power Dissipation Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Package Information Pin Descriptions Application Circuit Evaluation PCB List of Materials for Evaluation PCB 115927