Datasheet HMC591LP5, 591LP5E (Analog Devices) - 4
| Hersteller | Analog Devices |
| Beschreibung | GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz |
| Seiten / Seite | 8 / 4 — HMC591LP5 / 591LP5E. GaAs PHEMT MMIC 2 WATT. POWER AMPLIFIER, 6.0 - 9.5 … |
| Dateiformat / Größe | PDF / 412 Kb |
| Dokumentensprache | Englisch |
HMC591LP5 / 591LP5E. GaAs PHEMT MMIC 2 WATT. POWER AMPLIFIER, 6.0 - 9.5 GHz. Gain & Power vs. Supply Current @ 8 GHz
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Textversion des Dokuments
HMC591LP5 / 591LP5E
v02.0107
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz
36 36 32 32 Gain Gain 28 28 P1dB P1dB Psat Psat (dBm), Psat(dBm) (dBm), Psat(dBm) 24 24 11 20 20 GAIN (dB), P1dB GAIN (dB), P1dB 16 16 940 1140 1340 6.5 7 7.5 T Idd SUPPLY CURRENT (mA) Vdd SUPPLY VOLTAGE (Vdc) - SM
Reverse Isolation
S
vs. Temperature, 7V @ 1340 mA Power Dissipation
0 10 +25C -20 +85C 9 -40C PLIFIER -40 8 M ISOLATION (dB) 6 GHz 7 GHz -60 7 8 GHz POWER DISSIPATION (W) 9 GHz 10 GHz ER A -80 6 W 6 7 8 9 10 -14 -10 -6 -2 2 6 10 14 O FREQUENCY (GHz) INPUT POWER (dBm) & P
Typical Supply Current vs. Vdd
R
Absolute Maximum Ratings
A Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (mA) E Gate Bias Voltage (Vgg) -2.0 to 0 Vdc +6.5 1350 RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm +7.0 1340 LIN Channel Temperature 175 °C +7.5 1330 Continuous Pdiss (T= 75 °C) Note: Amplifi er will operate over full voltage ranges shown (derate 104.3 mW/°C above 75 °C) 10.43 W above Vgg adjusted to achieve Idd = 1340 mA at +7.0V Thermal Resistance (channel to package bottom) 9.59 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Pho - n 25 e: 7 0- 81 3 3 3 2 4 9- 3 F 470 ax: 978 0 • Order o - n 25 lin 0 e a-t 3373 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
11 - 305
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0107
GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz Gain & Power vs. Supply Current @ 8 GHz Gain & Power vs. Supply Voltage @ 8 GHz
36 36 32 32 Gain Gain 28 28 P1dB P1dB Psat Psat (dBm), Psat(dBm) (dBm), Psat(dBm) 24 24 11 20 20 GAIN (dB), P1dB GAIN (dB), P1dB 16 16 940 1140 1340 6.5 7 7.5 T Idd SUPPLY CURRENT (mA) Vdd SUPPLY VOLTAGE (Vdc) - SM
Reverse Isolation
S
vs. Temperature, 7V @ 1340 mA Power Dissipation
0 10 +25C -20 +85C 9 -40C PLIFIER -40 8 M ISOLATION (dB) 6 GHz 7 GHz -60 7 8 GHz POWER DISSIPATION (W) 9 GHz 10 GHz ER A -80 6 W 6 7 8 9 10 -14 -10 -6 -2 2 6 10 14 O FREQUENCY (GHz) INPUT POWER (dBm) & P
Typical Supply Current vs. Vdd
R
Absolute Maximum Ratings
A Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (mA) E Gate Bias Voltage (Vgg) -2.0 to 0 Vdc +6.5 1350 RF Input Power (RFIN)(Vdd = +7.0 Vdc) +15 dBm +7.0 1340 LIN Channel Temperature 175 °C +7.5 1330 Continuous Pdiss (T= 75 °C) Note: Amplifi er will operate over full voltage ranges shown (derate 104.3 mW/°C above 75 °C) 10.43 W above Vgg adjusted to achieve Idd = 1340 mA at +7.0V Thermal Resistance (channel to package bottom) 9.59 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Pho - n 25 e: 7 0- 81 3 3 3 2 4 9- 3 F 470 ax: 978 0 • Order o - n 25 lin 0 e a-t 3373 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
11 - 305
Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D