Datasheet HMC1086 (Analog Devices) - 2

HerstellerAnalog Devices
Beschreibung25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz
Seiten / Seite9 / 2 — HMC1086. 25 WATT GAN MMIC POWER AMPLIFIER,. 2 - 6 GHz. Gain and Return …
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HMC1086. 25 WATT GAN MMIC POWER AMPLIFIER,. 2 - 6 GHz. Gain and Return Loss. Gain vs. Vdd. Input Return Loss. Output Return Loss

HMC1086 25 WATT GAN MMIC POWER AMPLIFIER, 2 - 6 GHz Gain and Return Loss Gain vs Vdd Input Return Loss Output Return Loss

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HMC1086
v06.0318
25 WATT GAN MMIC POWER AMPLIFIER, 2 - 6 GHz Gain and Return Loss Gain vs. Vdd
30 30 20 25 10 IP B) (d ) B 0 d H SE ( N 20 IN -10 A G ESPO R -20 15 R - C -30 E -40 10 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 W FREQUENCY (GHz) FREQUENCY (GHz) O Vdd= 24V Vdd= 28V Vdd= 32V S21 S11 S22 R & P
Input Return Loss Output Return Loss
A 0 0 E -2 -5 IN -4 ) -10 ) B B -6 (d (d S -15 S S S -8 O O L -20 L -10 N N S - L UR -25 -12 UR T T R RE -14 RE -30 -16 IE -35 -18 -40 -20 LIF 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 P FREQUENCY (GHz) FREQUENCY (GHz) S11 M S22 A
Pout vs. Frequency Power Gain vs. Frequency
30 50 25 45 B) 20 (d N 40 AI (dBm) G 15 ER 35 W POUT 10 PO 30 5 0 25 2 3 4 5 6 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz) P1dB 25dBm Input Power Psat 25dBm Input Power Psat For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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Document Outline General Description Gain and Return Loss Gain vs. Vdd Input Return Loss Output Return Loss Pout vs. Frequency Power Gain vs. Frequency Power Added Efficiency vs. Pin Pout vs. Pin Pout vs. Temperature at Pin= 25dBm Pout vs. Vdd at Pin= 25dBm Psat vs. Temperature Psat vs. Vdd Drain Current vs. Pin OIP3 vs Pin/Tone IM3 vs. Pin/Tone Reverse Isolation Power Dissipation vs. Pin Second Harmonic vs. Pin Absolute Maximum Ratings[ Outline Drawing Pad Descriptions Application Circuit Assembly Diagram Mounting & Bonding Techniques for GaN MMICs