Datasheet HMC7149 (Analog Devices) - 10
| Hersteller | Analog Devices |
| Beschreibung | 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz |
| Seiten / Seite | 10 / 10 — HMC7149. 10 WATT GaN MMIC POWER AMPLIFIER,. 6 - 18 GHz. Mounting & … |
| Dateiformat / Größe | PDF / 944 Kb |
| Dokumentensprache | Englisch |
HMC7149. 10 WATT GaN MMIC POWER AMPLIFIER,. 6 - 18 GHz. Mounting & Bonding Techniques for GaN MMICs. Handling Precautions
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HMC7149
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10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz Mounting & Bonding Techniques for GaN MMICs
0.102mm (0.004”) Thick GaN MMIC The die should be eutectical y attached directly to the ground plane (see Wire Bond HMC general Handling, Mounting, Bonding Note). IP 0.076mm 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina H (0.003”) thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the R - C surface of the die is coplanar with the surface of the substrate. One RF Ground Plane E way to accomplish this is to attach the 0.102mm (4 mil) thick die to a copper tungsten or CuMo heat spreader which is then attached to the W thermal y conductive ground plane (Figure 2). 0.127mm (0.005”) Thick Alumina O Thin Film Substrate Microstrip substrates should be placed as close to the die as possible in Figure 1. order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
R & P 0.102mm (0.004”) Thick GaAs MMIC A Fol ow these precautions to avoid permanent damage. E Wire Bond
Storage:
All bare die are placed in either Waffle or Gel based ESD 0.076mm protective containers, and then sealed in an ESD protective bag for IN (0.003”) shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness:
Handle the chips in a clean environment. DO NOT S - L RF Ground Plane attempt to clean the chip using liquid cleaning systems. R
Static Sensitivity:
Fol ow ESD precautions to protect against ESD 0.150mm (0.005”) Thick IE strikes. Moly Tab 0.254mm (0.010”) Thick Alumina
Transients:
Suppress instrument and bias supply transients while bias Thin Film Substrate LIF is applied. Use shielded signal and bias cables to minimize inductive Figure 2. P pick-up. M
Die placement:
A heated vacuum col et (180°C) is the preferred method of pick up. Ensure that the area of vacuum A contact on the die is minimized to prevent cracking under differential pressure. All air bridges (if applicable) must be avoided during placement. Minimize impact forces applied to the die during auto-placement.
Mounting
The chip is back-metal ized with a minimum of 5 microns of gold and is the RF ground and thermal interface. It is recommended that the chip be die mounted with AuSn eutectic preforms. The mounting surface should be clean and flat.
Eutectic Reflow Process:
An 80/20 gold tin 0.5mil (13um) thick preform is recommended with a work surface tem- perature of 280°C. Limit exposure to temperatures above 300°C to 30 seconds maximum. A die bonder or furnace with 95% N / 5% H reducing atmosphere should be used. No organic flux should be used. Coefficient of thermal 2 2 expansion matching is critical for long term reliability.
Die Attach Inspection:
X-ray or acoustic scan is recommended.
Wire Bonding
Thermosonic ball or wedge bonding is the preferred interconnect technique. Gold wire must be used in a diameter appropriate for the pad size and number of bonds applied. Force, time and ultrasonics are critical parameters: opti- mize for a repeatable, high bond pull strength. Limit the die bond pad surface temperature to 200°C maximum. FIo nf r p orm raiticoe n , d fur e nislihvee d rby a y A n n d t alog o p Devila ce cs e o is b rd eli e ev res d : A to n b a e lao ccg D urat e e v anic d eresli, I abl n e c . .H, 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 owever, no For price, delivery, and to place orders: Analog Devices, In c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other Phone: 781-329-4700 • Order On-line at www.analog.com One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Phone: 781-329-4700 • Order online at www.analog.com
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Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
v
10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz Mounting & Bonding Techniques for GaN MMICs
0.102mm (0.004”) Thick GaN MMIC The die should be eutectical y attached directly to the ground plane (see Wire Bond HMC general Handling, Mounting, Bonding Note). IP 0.076mm 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina H (0.003”) thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the R - C surface of the die is coplanar with the surface of the substrate. One RF Ground Plane E way to accomplish this is to attach the 0.102mm (4 mil) thick die to a copper tungsten or CuMo heat spreader which is then attached to the W thermal y conductive ground plane (Figure 2). 0.127mm (0.005”) Thick Alumina O Thin Film Substrate Microstrip substrates should be placed as close to the die as possible in Figure 1. order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
R & P 0.102mm (0.004”) Thick GaAs MMIC A Fol ow these precautions to avoid permanent damage. E Wire Bond
Storage:
All bare die are placed in either Waffle or Gel based ESD 0.076mm protective containers, and then sealed in an ESD protective bag for IN (0.003”) shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness:
Handle the chips in a clean environment. DO NOT S - L RF Ground Plane attempt to clean the chip using liquid cleaning systems. R
Static Sensitivity:
Fol ow ESD precautions to protect against ESD 0.150mm (0.005”) Thick IE strikes. Moly Tab 0.254mm (0.010”) Thick Alumina
Transients:
Suppress instrument and bias supply transients while bias Thin Film Substrate LIF is applied. Use shielded signal and bias cables to minimize inductive Figure 2. P pick-up. M
Die placement:
A heated vacuum col et (180°C) is the preferred method of pick up. Ensure that the area of vacuum A contact on the die is minimized to prevent cracking under differential pressure. All air bridges (if applicable) must be avoided during placement. Minimize impact forces applied to the die during auto-placement.
Mounting
The chip is back-metal ized with a minimum of 5 microns of gold and is the RF ground and thermal interface. It is recommended that the chip be die mounted with AuSn eutectic preforms. The mounting surface should be clean and flat.
Eutectic Reflow Process:
An 80/20 gold tin 0.5mil (13um) thick preform is recommended with a work surface tem- perature of 280°C. Limit exposure to temperatures above 300°C to 30 seconds maximum. A die bonder or furnace with 95% N / 5% H reducing atmosphere should be used. No organic flux should be used. Coefficient of thermal 2 2 expansion matching is critical for long term reliability.
Die Attach Inspection:
X-ray or acoustic scan is recommended.
Wire Bonding
Thermosonic ball or wedge bonding is the preferred interconnect technique. Gold wire must be used in a diameter appropriate for the pad size and number of bonds applied. Force, time and ultrasonics are critical parameters: opti- mize for a repeatable, high bond pull strength. Limit the die bond pad surface temperature to 200°C maximum. FIo nf r p orm raiticoe n , d fur e nislihvee d rby a y A n n d t alog o p Devila ce cs e o is b rd eli e ev res d : A to n b a e lao ccg D urat e e v anic d eresli, I abl n e c . .H, 1 Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 owever, no For price, delivery, and to place orders: Analog Devices, In c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other Phone: 781-329-4700 • Order On-line at www.analog.com One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Phone: 781-329-4700 • Order online at www.analog.com
10
Application Support: Phone: 1-800-ANALOG-D Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D