Datasheet HMC7441 (Analog Devices)
| Hersteller | Analog Devices |
| Beschreibung | GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.5 - 31 GHz |
| Seiten / Seite | 10 / 1 — HMC7441. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 27.5 - 31 GHz. Typical … |
| Dateiformat / Größe | PDF / 558 Kb |
| Dokumentensprache | Englisch |
HMC7441. GaAs pHEMT MMIC 2 WATT. POWER AMPLIFIER, 27.5 - 31 GHz. Typical Applications. Features. Functional Diagram
Modelllinie für dieses Datenblatt
Textversion des Dokuments
HMC7441
v00.0913
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.5 - 31 GHz Typical Applications Features
The HMC7441 is ideal for: Saturated Output Power: +34 dBm @ 25% PAE IP • Point-to-Point Radios High Output IP3: +38 dBm H • Point-to-Multi-Point Radios High Gain: 23 dB • VSAT & SATCOM DC Supply: +6V @ 1000 mA • Military & Space No External Matching Required R - C E Die Size: 3.18 x 2.84 x 0.1 mm W O
Functional Diagram General Description
The HMC7441 is a three-stage GaAs pHEMT Power R & P Amplifier which operates between 27.5 and 31 GHz. A The amplifier provides 23 dB of gain and +34 dBm E of saturated output power at 25% PAE from a 6V supply. With an excel ent output IP3 of +38 dBm, the IN HMC7441 is ideal for linear application such as Ka- band VSAT or high capacity point-to-point or point- to-multi-point radios demanding +34 dBm of efficient S - L saturated output power. The RF I/Os are DC blocked R and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken IE with the chip in a 50 Ohm test fixture connected via (1) 0.025mm (1 mil) diameter wire bonds of 0.31 mm LIF (12 mil) length. P M A
Electrical Specifications, T = +25° C A Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +6V, Idd = 1000 mA [1]
Parameter Min. Typ. Max. Units Frequency Range 27.5 - 31 GHz Gain 20 23 dB Gain Variation Over Temperature 0.03 dB/ °C Input Return Loss 8 dB Output Return Loss 8 dB Output Power for 1 dB Compression (P1dB) 31 34 dBm Saturated Output Power (Psat) 34 dBm Output Third Order Intercept (IP3)[2] 38 dBm Total Supply Current (Idd) 1000 mA [1] Adjust Vgg between -2 to 0V to achieve Idd = 1000 mA typical. [2] Measurement taken at +6V @ 1000 mA, Pout / Tone = +28 dBm Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v00.0913
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.5 - 31 GHz Typical Applications Features
The HMC7441 is ideal for: Saturated Output Power: +34 dBm @ 25% PAE IP • Point-to-Point Radios High Output IP3: +38 dBm H • Point-to-Multi-Point Radios High Gain: 23 dB • VSAT & SATCOM DC Supply: +6V @ 1000 mA • Military & Space No External Matching Required R - C E Die Size: 3.18 x 2.84 x 0.1 mm W O
Functional Diagram General Description
The HMC7441 is a three-stage GaAs pHEMT Power R & P Amplifier which operates between 27.5 and 31 GHz. A The amplifier provides 23 dB of gain and +34 dBm E of saturated output power at 25% PAE from a 6V supply. With an excel ent output IP3 of +38 dBm, the IN HMC7441 is ideal for linear application such as Ka- band VSAT or high capacity point-to-point or point- to-multi-point radios demanding +34 dBm of efficient S - L saturated output power. The RF I/Os are DC blocked R and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken IE with the chip in a 50 Ohm test fixture connected via (1) 0.025mm (1 mil) diameter wire bonds of 0.31 mm LIF (12 mil) length. P M A
Electrical Specifications, T = +25° C A Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +6V, Idd = 1000 mA [1]
Parameter Min. Typ. Max. Units Frequency Range 27.5 - 31 GHz Gain 20 23 dB Gain Variation Over Temperature 0.03 dB/ °C Input Return Loss 8 dB Output Return Loss 8 dB Output Power for 1 dB Compression (P1dB) 31 34 dBm Saturated Output Power (Psat) 34 dBm Output Third Order Intercept (IP3)[2] 38 dBm Total Supply Current (Idd) 1000 mA [1] Adjust Vgg between -2 to 0V to achieve Idd = 1000 mA typical. [2] Measurement taken at +6V @ 1000 mA, Pout / Tone = +28 dBm Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D