Datasheet HMC637ALP5E (Analog Devices)

GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz Data Sheet HMC637ALP5E FEATURES FUNCTIONAL BLOCK DIAGRAM 1 2 P1dB output power: 29 dBm C C C C C C NI NI ACG ACG NI NI NI NI Gain: 13 dB 32 31 30 29 28 27 26 25 Output IP3: 44 dBm 50 Ω matched input/output NIC 1 HMC637ALP5E 24 NIC 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2 VGG2 2 23 NIC NIC 3 22 GND APPLICATIONS GND 4 21 RFOUT/VDD RFIN 5 20 NIC Telecom infrastructure NIC 6 19 NIC NIC 7 18 NIC Microwave radio NIC 8 17 NIC Very small aperture terminal (VSAT) 9 Military and space 10 11 12 13 14 15 16 C C C D 1 C 4 3 Test instrumentation NI NI NI GN GG NI V
1
ACG ACG
00
Fiber optics
8- 30
NIC = NO INTERNAL CONNECTION
17 Figure 1.
GENERAL DESCRIPTION
The HMC637ALP5E is a gallium arsenide (GaAs), monolithic flatness is ±0.75 dB from 100 MHz to 6 GHz making the microwave integrated circuit (MMIC), pseudomorphic high HMC637ALP5E ideal for electronic warfare (EW), electronic electron mobility transistor (pHEMT) distributed power counter-measure (ECM), radar and test equipment applications. amplifier which operates between 0.1 GHz and 6 GHz. The The HMC637ALP5E amplifier radio frequency (RF) I/Os are amplifier provides 13 dB of gain, 44 dBm output third-order internally matched to 50 Ω, and the 5 mm × 5 mm lead frame intercept (IP3), and 29 dBm of output power at 1 dB gain chip scale package (LFCSP) is compatible with high volume compression while requiring 400 mA from a 12 V supply. Gain surface-mount technology (SMT) assembly equipment.
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Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Applications Information Evaluation PCB List of Materials for PCB EV1HMC637ALP5E Outline Dimensions Ordering Guide