Datasheet HMC943APM5E (Analog Devices)

>1.5 W (34 dBm), 24 GHz to 34 GHz, GaAs, pHEMT, MMIC, Power Amplifier Data Sheet HMC943APM5E FEATURES FUNCTIONAL BLOCK DIAGRAM High saturated output power (PSAT): 34 dBm HMC943APM5E High output IP3: 39 dBm ND C ND High gain: 23 dB G V G1 V D1 V D3 V D5 NI V D7 G 32 31 30 29 28 27 26 25 DC supply: 5.5 V at 1300 mA No external matching required GND 1 24 GND 32-lead, 5 mm × 5 mm LFCSP_CAV package NIC 2 23 NIC GND 3 22 GND APPLICATIONS RF 4 IN 21 RFOUT GND 5 2kΩ 2kΩ 20 GND Point to point radios NIC 6 19 VDET NIC 7 18 VREF Point to multipoint radios GND 8 17 GND Microwave radios, very small aperture terminals (VSATs), 9 PACKAGE and satellite communications (SATCOM) 10 11 12 13 14 15 16 BASE C
001
Military and space ND ND G V G2 V D2 V D4 V D6 NI V D8 G GND
16864- Figure 1.
GENERAL DESCRIPTION
The HMC943APM5E is a four stage, gallium arsenide (GaAs), of 39 dBm makes the HMC943APM5E ideal for microwave pseudomorphic high electron mobility transistor (pHEMT), radio applications. A power detector output is also available. monolithic microwave integrated circuit (MMIC), >1.5 W The HMC943APM5E amplifier input/outputs (I/Os) are power amplifier that operates between 24 GHz to 34 GHz. The internal y matched to 50 Ω. The device is packaged in a leadless, HMC943APM5E provides 23 dB of gain, 34 dBm of saturated 5 mm × 5 mm, surface-mount LFCSP_CAV package, and output power (PSAT), and 23% power added efficiency (PAE) requires no external matching components. from a 5.5 V supply. The high output third-order intercept (IP3)
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Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION POWER DETECTION EVALUATION BOARD EVALUATION BOARD SCHEMATIC OUTLINE DIMENSIONS ORDERING GUIDE